A new data dimension-reduction method, called Internal Information Redundancy Reduction (IIRR), is proposed for application to Optical Emission Spectroscopy (OES) datasets obtained from industrial plasma processes. For example in a semiconductor manufacturing environment, real-time spectral emission data is potentially very useful for inferring information about critical process parameters such as wafer etch rates, however, the relationship between the spectral sensor data gathered over the duration of an etching process step and the target process output parameters is complex. OES sensor data has high dimensionality (fine wavelength resolution is required in spectral emission measurements in order to capture data on all chemical species involved in plasma reactions) and full spectrum samples are taken at frequent time points, so that dynamic process changes can be captured. To maximise the utility of the gathered dataset, it is essential that information redundancy is minimised, but with the important requirement that the resulting reduced dataset remains in a form that is amenable to direct interpretation of the physical process. To meet this requirement and to achieve a high reduction in dimension with little information loss, the IIRR method proposed in this paper operates directly in the original variable space, identifying peak wavelength emissions and the correlative relationships between them. A new statistic, Mean Determination Ratio (MDR), is proposed to quantify the information loss after dimension reduction and the effectiveness of IIRR is demonstrated using an actual semiconductor manufacturing dataset. As an example of the application of IIRR in process monitoring/control, we also show how etch rates can be accurately predicted from IIRR dimension-reduced spectral data.

A Similarity Ratio Analysis (SRA) method is proposed for early-stage Fault Detection (FD) in plasma etching processes using real-time Optical Emission Spectrometer (OES) data as input. The SRA method can help to realise a highly precise control system by detecting abnormal etch-rate faults in real-time during an etching process. The method processes spectrum scans at successive time points and uses a windowing mechanism over the time series to alleviate problems with timing uncertainties due to process shift from one process run to another. A SRA library is first built to capture features of a healthy etching process. By comparing with the SRA library, a Similarity Ratio (SR) statistic is then calculated for each spectrum scan as the monitored process progresses. A fault detection mechanism, named 3-Warning-1-Alarm (3W1A), takes the SR values as inputs and triggers a system alarm when certain conditions are satisfied. This design reduces the chance of false alarm, and provides a reliable fault reporting service. The SRA method is demonstrated on a real semiconductor manufacturing dataset. The effectiveness of SRA-based fault detection is evaluated using a time-series SR test and also using a post-process SR test. The time-series SR provides an early-stage fault detection service, so less energy and materials will be wasted by faulty processing. The post-process SR provides a fault detection service with higher reliability than the time-series SR, but with fault testing conducted only after each process run completes.