Time-resolved nondegenerate four-wave mixing experiments were performed on 2.6-μm-thick GaN epilayers grown by metalorganic chemical-vapor deposition using picosecond pulses at 355 and 1064 nm for grating recording and probing, respectively. Measurements of free carrier grating kinetics at various grating periods Λ in range from 3 to 10 μm allowed determination of nonequilibrium carrier bipolar diffusion coefficient $\text{D=1.7\hspace{0.5em}}{\mathrm{cm}}^2/\mathrm{s}$ at 300 K. Substitution of the $D$ value into two-dimensional carrier transport model allowed fitting of the whole set of grating kinetics at various Λ varying surface recombination velocity $S$ and linear recombination time ${\tau }_R.$ This procedure provided us a value of ${\text{S=5×10}}^4$ cm/s as well as carrier lifetime of ∼1 ns.

We present a detailed study of photoluminescence transients for neutral donor bound excitons (DBEs) in GaN, notably the ${\text{O}}_{\text{N}}$ donor DBE at 3.4714 eV and the ${\text{Si}}_{\text{Ga}}$ DBE at 3.4723 eV. The studied samples are thick strain free nominally undoped bulk GaN samples, with a spectroscopic linewidth $<0.5\text{meV}$ at 2 K. The photoluminescence (PL) decay curves for these no-phonon (NP) lines are strongly nonexponential, and do not allow a proper assessment of the characteristic BE decay time. The decay of the LO-phonon replicas as well as the so-called two-electron transitions (TETs) at lower energies show a nicely exponential behavior, and allow extraction of DBE decay times of about 1.1 ns for the Si DBE and 1.8 ns for the O DBE, respectively. The initial nonexponential decay behavior of the NP lines has been studied in both the common front surface excitation-detection mode and with detection in transmission through the sample. This initial decay is explained as related to scattering processes in the near surface region, involving the DBEs and free excitons (FEs). Light scattering processes may also contribute to this complex decay shape. The DBE-LO-phonon decay does not discriminate between the O and Si DBEs because of spectral overlap involving different LO modes. The TET decays at 2 K are very different for transitions related to the DBE ground state and DBE excited states (going to $p$-like donor final states), for $T>10\text{K}$ thermalization between the DBE ground state and DBE excited states produces a common decay time. Thermalization between free and bound excitons appears to occur above about 20 K, when the DBE decay follows the FE decay. A simple two-level modeling of exciton capture and recombination for the PL decay curves of the FE and the DBEs, as commonly used in the literature, is shown to be generally inadequate. A broad PL background in the TET spectral region is suggested to be related to a radiative Auger process, where the DBEs recombine while leaving the donors ionized.