We report on transport measurements of an InAs nanowire coupled to niobium nitride leads at high magnetic fields. We observe a zero-bias anomaly (ZBA) in the differential conductance of the nanowire for certain ranges of magnetic field and chemical potential. The ZBA can oscillate in width with either the magnetic field or chemical potential; it can even split and re-form. We discuss how our results relate to recent predictions of hybridizing Majorana fermions in semiconducting nanowires, while considering more mundane explanations.

III-V junctionless gate-all-around (GAA) nanowire MOSFETs (NWFETs) are experimentally demonstrated for the first time. Source/drain resistance and thermal budget are minimized by regrowth using metalorganic chemical vapor deposition instead of implantation. The fabricated short channel (Lg=80 nm) GaAs GAA NWFETs with extremely scaled NW width (WNW=9 nm) exhibit excellent gm linearity at biases as low as 300 mV, characterized by the high third intercept point (2.6 dbm). The high linearity is insensitive to the bias conditions, which is favorable for low power applications.