Porous materials display enhanced scattering mechanisms that greatly influence their transport properties. Metal-assisted chemical etching (MACE) enables fabrication of porous silicon nanowires starting from a doped Si wafer by using a metal template that catalyzes the etching process. Here, we report on the low thermal conductivity (κ) of individual porous Si nanowires (NWs) prepared from MACE, with values as low as 0.87 W·m⁻¹·K⁻¹ for 90 nm diameter wires with 35–40% porosity. Despite the strong suppression of long mean free path phonons in porous materials, we find a linear correlation of κ with the NW diameter. We ascribe this dependence to the anisotropic porous structure that arises during chemical etching and modifies the phonon percolation pathway in the center and outer regions of the nanowire. The inner microstructure of the NWs is visualized by means of electron tomography. In addition, we have used molecular dynamics simulations to provide guidance for how a porosity gradient influences phonon transport along the axis of the NW. Our findings are important towards the rational design of porous materials with tailored thermal and electronic properties for improved thermoelectric devices.

The incorporation of dyes in liquid crystal matrices has been exploited to produce enhanced displays, but it can also be used to probe ordering in liquid crystals and to assess intermolecular interactions and dye aggregation. In this study, we investigated polarized absorption and emission of the luminescent dyes 4,7-bis(2-(4-(decyloxy)phenyl)ethynyl)-[2,1,3]-benzothiadiazole (1A) and 4,7-bis{2-[4-(4-decylpiperazin-1-yl)phenyl]ethynyl}-[2,1,3]-benzothiadiazole (5A) in the E7® liquid crystal. The electronic structures of both 1A and 5A dyes were affected by the matrix and by the analysis of the line shape of emission we could determine that the dyes form J aggregates. This achievement is significant because obtaining this type of information for small molecules requires ordered matrices, which is difficult to obtain for these dyes. Using emission ellipsometry we were able to determine the ordering of the E7 molecules, but this was possible only with the larger 5A dye. The smaller 1A was not entirely ordered in the E7 matrix and this calls for caution in other types of work where dopants are used as probes to infer the properties of the matrix. The emission ellipsometry data for the dyes allowed us to detect the enhanced birefringence in the matrix, thus confirming the theoretical prediction.

Thermoelectricity (TE) is proving to be a promising way to harvest energy for small applications and to produce a new range of thermal sensors. Recently, several thermoelectric generators (TEGs) based on nanomaterials have been developed, outperforming the efficiencies of many previous bulk generators. Here, we presented the thermoelectric characterization at different temperatures (from 50 to 350 K) of the Si thin-film based on Phosphorous (n) and Boron (p) doped thermocouples that conform to a planar micro TEG. The thermocouples were defined through selective doping by ion implantation, using boron and phosphorous, on a 100 nm thin Si film. The thermal conductivity, the Seebeck coefficient, and the electrical resistivity of each Si thermocouple was experimentally determined using the in-built heater/sensor probes and the resulting values were refined with the aid of finite element modeling (FEM). The results showed a thermoelectric figure of merit for the Si thin films of $zT$ = 0.0093, at room temperature, which was about 12% higher than the bulk Si. In addition, we tested the thermoelectric performance of the TEG by measuring its own figure of merit, yielding a result of ZT = 0.0046 at room temperature.

Thermoelectric materials capable of converting heat into electrical energy are used in sustainable electric generators, whose efficiency has been normally increased with incorporation of new materials with high figure of merit (ZT) values. Because the performance of these thermoelectric generators (TEGs) also depends on device geometry, in this study we employ the finite element method to determine optimized geometries for highly efficient miniaturized TEGs. We investigated devices with similar fill factors but with different thermoelectric leg geometries (filled and hollow). Our results show that devices with legs of hollow geometry are more efficient than those with filled geometry for the same length and cross-sectional area of thermoelectric legs. This behavior was observed for thermoelectric leg lengths smaller than 0.1 mm, where the leg shape causes a significant difference in temperature distribution along the device. It was found that for reaching highly efficient miniaturized TEGs, one has to consider the leg geometry in addition to the thermal conductivity.

In the present work, we have studied the liquid crystalline properties of a luminescent molecule, which presents smectic mesophases, using the emission ellipsometry technique. A methodology with photoselection of the excitation light to improve the experiment is presented. An empirical model is proposed to explain the experimental results. The Stokes parameters of the emitted light allowed the correlation of changes in the polarization degree, ellipticity angle, and rotation angle with phase transitions.