Fine-grain induced ultrahigh energy storage density and fast discharge speed in novel Bi _0.5 K _0.5 TiO ₃ –Ba(Mg _1/3 Nb _2/3 )O ₃ ceramics via a hot-pressing strategy.

Future data-intensive applications will have integrated circuit architectures combining energy-efficient transistors, high-density data storage and electro-optic sensing arrays in a single chip to perform in situ processing of captured data. The costly dense wire connections in 3D integrated circuits and in conventional packaging and chip-stacking solutions could affect data communication bandwidths, data storage densities, and optical transmission efficiency. Here we investigated all-ferroelectric nonvolatile LiNbO₃ transistors to function through redirection of conducting domain walls between the drain, gate and source electrodes. The transistor operates as a single-pole, double-throw digital switch with complementary on/off source and gate currents controlled using either the gate or source voltages. The conceived device exhibits high wall current density and abrupt off-and-on state switching without subthreshold swing, enabling nonvolatile memory-and-sensor-in-logic and logic-in-memory-and-sensor capabilities with superior energy efficiency, ultrafast operation/communication speeds, and high logic/storage densities.

Nontrivial topological structures offer a rich playground in condensed matters and promise alternative device configurations for post-Moore electronics. While recently a number of polar topologies have been discovered in confined ferroelectric PbTiO₃ within artificially engineered PbTiO₃/SrTiO₃ superlattices, little attention was paid to possible topological polar structures in SrTiO₃. Here we successfully create previously unrealized polar antivortices within the SrTiO₃ of PbTiO₃/SrTiO₃ superlattices, accomplished by carefully engineering their thicknesses guided by phase-field simulation. Field- and thermal-induced Kosterlitz–Thouless-like topological phase transitions have also been demonstrated, and it was discovered that the driving force for antivortex formation is electrostatic instead of elastic. This work completes an important missing link in polar topologies, expands the reaches of topological structures, and offers insight into searching and manipulating polar textures.

Ceramic capacitors, known for their exceptional energy‐storage performance (ESP), are crucial components in high‐pulsed power systems. However, their ESP is significantly constrained by breakdown strength ( E _b ), which is influenced by interfacial polarization. This study delves into the physics, characterization, and application of interfacial polarization. The findings indicate that key factors affecting ESP, such as grain size, relaxor factor, and bandgap, are intrinsically linked to interfacial polarization, establishing it as the most critical determinant of ESP. To demonstrate the practical applications of interfacial polarization engineering, lead‐free ceramics of (1‐x)(0.94Bi _0.5 Na _0.5 TiO ₃ ‐0.06BaTiO ₃ )‐ x Ca _0.7 Bi _0.2 (Sn _0.5 Ti _0.5 )O ₃ (abbreviated as (BNT‐BT)‐ x CBST is designed, where x = 0, 0.1, 0.15, 0.2, and 0.25). The (BNT‐BT)‐0.25CBST sample, with a thickness of 120 µm, achieved an ultrahigh recoverable energy‐storage density ( W _rec ) of 12.2 J cm ⁻³ and a high efficient (η) of 88.8%, along with excellent temperature/frequency stability and outstanding charge/discharge performance. The remarkable ESP is attributed to the suppression of interfacial polarization, which significantly enhances E _b . This work highlights the pivotal role of interfacial polarization engineering in the development of energy‐storage ceramics with superior comprehensive performance.