Young-Han Shin

Dr. Young-Han Shin


Research Focus & Metrics

Academic Career Length

29Years (1998-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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7 October 2007 in Nature
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Journal Article
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YSYoung-Han Shin
Young-Han Shin
IGIlya Grinberg
Ilya Grinberg
ICI-Wei Chen
I-Wei Chen
ARAndrew M. Rappe
Andrew M. Rappe

30 March 2017 in Scientific Reports
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Journal Article
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ASAamir Shafique
Aamir Shafique
YSYoung-Han Shin
Young-Han Shin
We explore the thermoelectric and phonon transport properties of two-dimensional monochalcogenides (SnSe, SnS, GeSe, and GeS) using density functional theory combined with Boltzmann transport theory. We studied the electronic structures, Seebeck coefficients, electrical conductivities, lattice thermal conductivities, and figures of merit of these two-dimensional materials, which showed that the thermoelectric performance of monolayer of these compounds is improved in comparison compared to their bulk phases. High figures of merit (ZT) are predicted for SnSe (ZT = 2.63, 2.46), SnS (ZT = 1.75, 1.88), GeSe (ZT = 1.99, 1.73), and GeS (ZT = 1.85, 1.29) at 700 K along armchair and zigzag directions, respectively. Phonon dispersion calculations confirm the dynamical stability of these compounds. The calculated lattice thermal conductivities are low while the electrical conductivities and Seebeck coefficients are high. Thus, the properties of the monolayers show high potential toward thermoelectric applications.

14 July 2017 in Physical Chemistry Chemical Physics
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ASAamir Shafique
Aamir Shafique
ASAbdus Samad
Abdus Samad
YSYoung-Han Shin
Young-Han Shin
Using density functional theory, we systematically investigate the lattice thermal conductivity and carrier mobility of monolayer SnX 2 (X = S, Se).

3 May 2010 in ACS Nano
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Journal Article
Closed access
JSJong Yeog Son
Jong Yeog Son
YSYoung-Han Shin
Young-Han Shin
HKHyungjun Kim
Hyungjun Kim
HJHyun M. Jang
Hyun M. Jang

30 March 2017 in Nanotechnology
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ASAbdus Samad
Abdus Samad
ASAamir Shafique
Aamir Shafique
YSYoung-Han Shin
Young-Han Shin
A comparative study of the monovalent (Li, Na, and K) and multivalent (Be, Mg, Ca, and Al) metal ion adsorption and diffusion on an electronically semi-metallic two-dimensional nanosheet of 1T structured TiS 2 is presented here to contribute to the search for abundant, cheap, and nontoxic ingredients for efficient rechargeable metal ion batteries. The total formation energy of the metal ion adsorption and the Bader charge analysis show that the divalent Mg and Ca ions can have a charge storage density double that of the monovalent Li, Na, and K ions, while the Be and Al ions form metallic clusters even at a low adsorption density because of their high bulk energies. The adsorption of Mg ions shows the lowest averaged open circuit voltage (0.13 V). The activation energy barriers for the diffusion of metal ions on the surface of the monolayer successively decrease from Li to K and Be to Ca. Mg and Ca, being divalent, are capable of storing a higher power density than Li while K and Na have a higher rate capability than the Li ions. Therefore, rechargeable Li ion batteries can be totally or partially replaceable by Mg ion batteries, where high power density and high cell voltage are required, while the abundant, cheap, and fast Na ions can be used for green grid applications.

19 June 2009 in Physical Review Letters
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Journal Article
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TQTingting Qi
Tingting Qi
YSYoung-Han Shin
Young-Han Shin
KYKa-Lo Yeh
Ka-Lo Yeh
KNKeith A. Nelson
Keith A. Nelson
ARAndrew M. Rappe
Andrew M. Rappe
We show that properly shaped terahertz (THz) fields can be used to move ions in ferroelectric crystals from their positions in an initial domain orientation along well-defined collective microscopic paths into the positions they occupy in a new domain orientation. Collective coherent control will enable direct observation of fast highly nonlinear material responses and far-from-equilibrium structures that can be harnessed in electro-optic devices and nonvolatile computer memory. DOI: http://dx.doi.org/10.1103/PhysRevLett.102.247603 © 2009 The American Physical Society