In this article, Si (100) inks’ array is integrated on SiN/AlGaN/GaN substrate to demonstrate a zero deviation and wafer-scale Si–GaN monolithic integration by transfer printing and self-aligned etching technology. During the heterogeneous integration process, it does not depend on any equipment, such as metal–organic chemical vapor deposition (MOCVD) (epitaxial growth) and wafer bonding machine (wafer bonding) which are costly. The transferred Si and SiN/AlGaN/GaN substrates show an excellent interface morphology. Based on this material system, the monolithic integrated E-mode cascode FETs are demonstrated with good uniformity. The ${I}_{GS}$ is below 10 ⁻⁵ mA/mm within a large gate voltage swing of ±18 V. Threshold voltages of a series of cascode FETs are extracted as 2.2 V (±0.2 V). This novel low-cost technology shows great potential in monolithic heterogeneous integration.

Bendable single crystal silicon nanomembrane thin film transistors (SiNMs TFTs), employing a simple method which can improve the metal/n-Silicon (Si) contact characteristics by inserting the titanium dioxide (TiO₂) interlayer deposited by atomic layer deposition (ALD) at a low temperature (90 °C), are fabricated on ITO/PET flexible substrates. Current-voltage characteristics of titanium (Ti)/insertion layer (IL)/n-Si structures demonstrates that they are typically ohmic contacts. X-ray photoelectron spectroscopy (XPS) results determines that TiO₂ is oxygen-vacancies rich, which may dope TiO₂ and contribute to a lower resistance. By inserting TiO₂ between Ti and n-Si, I_ds of bendable single crystal SiNMs TFTs increases 3–10 times than those without the TiO₂ insertion layer. The fabricated bendable devices show superior flexible properties. The TFTs, whose electrical properties keeps almost unchanged in 800 cycles bending with a bending radius of 0.75 cm, obtains the durability in bending test. All of the results confirm that it is a promising method to insert the TiO₂ interlayer for improving the Metal/n-Si ohmic contact in fabrication of bendable single crystal SiNMs TFTs.

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