We review the current stage of research of track formation processes and mechanisms in materials irradiated by swift ions. We show that the nature and morphology of tracks depend on the type and structure of the material and on the energy density transfer to its electron subsystem. Swift heavy ions serve as tools to synthesize nanoclusters and nanowires, to controllably change their morphology, and to tailor electronic, magnetic, and optical properties. The unique optical, photoelectric, and conducting properties of tracks can be used to create a new generation of electronic and optoelectronic nanosize devices. These low-dimensional objects exhibit quantum behavior and are stimulating a broad range of fundamental and applied research.

Damage production was studied in 250-MeV Xe-ion irradiated single-crystalline InP by means of Rutherford backscattering spectrometry using a channeling technique and cross-section TEM. Different concentrations and types of defects are created at different depths of the trajectory due to the different dominating interaction processes. Depending on the ion fluence the formation of discontinuous tracks and amorphous layers was registered in the depth region of high electronic energy loss of the incident ions. The observed findings are interpreted as the effect of a thermal spike in combination with damage accumulation resulting from imperfect epitaxial recrystallization of the molten ion tracks.