The structure of high quality $[{\mathrm{YBCO}}_N/{\mathrm{PBCO}}_M{]}_{1000Å}$ superlattices, with $N$ ranging between 1 and 12 unit cells and $M=5\mathrm{}$ unit cells, grown by high oxygen pressure sputtering, is analyzed. Intracell atomic structure of the layers along the $c$ axis and disorder at interfaces is investigated using an x-ray refinement technique. Negligible roughness, step disorder, and interdiffusion are found at the interfaces. Epitaxial mismatch strain results in a surprising reorganization of interatomic distances for the thinnest YBCO layers, which seems to correlated with the decrease in the critical temperature. Intracell structure is invoked as an additional source of $T_c$ changes in very thin YBCO layers.

We present a study of the physical properties of TiO2 thin films deposited at 200°C on Si by high pressure reactive sputtering, a nonconventional deposition method. Just after deposition, the TiO2 films were in situ annealed in the deposition chamber at temperatures between 600 and 900°C in O2 atmosphere. Morphological, compositional, structural and electrical characterization of the samples was performed by means of several techniques, including transmission electron microscopy, heavy-ion elastic recoil detection analysis, infrared spectroscopy, x-ray and electron diffraction and capacitance-voltage measurements. Microscopy images show that the TiO2 films are polycrystalline, and that a SiO2 film spontaneously grows at the TiO2∕Si interface. The unannealed TiO2 films are oxygen rich, as shown by compositional measurements. By annealing this oxygen excess is released. For temperatures above 600°C the TiO2 films are stoichiometric. Infrared spectroscopy and diffraction measurements show that as-deposited films are a mixture of anatase and rutile grains. During annealing there is a phase transformation, and at 900°C the anatase phase disappears and only the rutile phase is found. The relative dielectric permittivity of the TiO2 film is calculated from capacitance-voltage measurements, and very high values in the 88–102 range are obtained.