With Ar plasma treatment of the indium tin oxide (ITO) cathode, we achieve efficient inverted bulk heterojunction solar cells based on poly(3-hexylthiophene):[6,6]-phenyl C61butyric acid methyl ester, which do not require electron selective layer.
High power impulse magnetron sputtering (HiPIMS) is well known in modern physical vapor deposition (PVD) owing to its high peak power density, high degree of ionization, high plasma density and hence high ion flux towards the substrate that allows ones to deposit high quality thin films in comparison with conventional magnetron sputtering technology. The present short review on HiPIMS intends to provide readers with a summary of the current status of this emerging PVD technique: the developmental history, the plasma characterization, and the applications in hardness and functional thin film fabrications. Several items on the distinctive feature of HiPIMS, including self-sputtering mechanism, low deposition rate, arcing phenomenon and key factors of deposition process are reviewed in detail. To limit the scope, the emphasis is put on thermo-chromic VO2 thin film deposited by HiPIMS. Based on this typical issue, some classical ideas and approaches on fabrication of the functional thin films through HiPIMS technique are demonstrated.
A large gap was acquired between electrodes (up to 5.5 mm) of Ar atmospheric pressure glow discharge in radio frequency dielectric barrier discharge (rf-DBD). The discharge of Ar plasma was characterized by I-V curve and Lissajous plot, and the effective power of the discharge was calculated based on the measured Lissajous plot and found to be higher than 90% of the input power. To gain a thorough understanding of the mechanism, the rf-DBD with a single dielectric barrier layer operating in mode glow discharge of plasma was diagnosed in spatial resolution through optical emission spectroscopy. It was concluded that secondary electron emission might be responsible for the sustainable glow discharge in the large gap rf-DBD plasma.