Qiang Chen

Qiang Chen

orcid

Research Focus & Metrics

Academic Career Length

33Years (1994-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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1 January 2014 in Yonsei Medical Journal
Verified
Journal Article
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TZTianlu Zhang
Tianlu Zhang
LWLiming Wang
Liming Wang
QCQiang Chen
Qiang Chen
CCChunying Chen
Chunying Chen
Zhang T, et al. Yonsei Med J. 2014 Mar;55(2):283-291. https://doi.org/10.3349/ymj.2014.55.2.283

20 January 2010 in Frontiers of Materials Science in China
Verified
Journal Article
Closed access
PDF file
LDLiang-Xu Dong
Liang-Xu Dong
QCQiang Chen
Qiang Chen

2 December 2014 in Physical Chemistry Chemical Physics
Verified
Journal Article
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HWHuiyun Wei
Huiyun Wei
JSJiangjian Shi
Jiangjian Shi
XXXin Xu
Xin Xu
JXJunyan Xiao
Junyan Xiao
JLJianheng Luo
Jianheng Luo
QCQiang Chen
Qiang Chen
A MIS back contact was constructed by introducing an ultrathin AlOxlayer to improve the performance of HTM-free perovskite solar cells.

18 September 2014 in Journal of Materials Chemistry C
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Journal Article
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CZChunmei Zhang
Chunmei Zhang
LQLei Qi
Lei Qi
QCQiang Chen
Qiang Chen
LLLongfeng Lv
Longfeng Lv
YNYu Ning
Yu Ning
FTFeng Teng
Feng Teng
With Ar plasma treatment of the indium tin oxide (ITO) cathode, we achieve efficient inverted bulk heterojunction solar cells based on poly(3-hexylthiophene):[6,6]-phenyl C61butyric acid methyl ester, which do not require electron selective layer.

1 March 2019 in AIP Advances
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Journal Article
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HZHaibao Zhang
Haibao Zhang
JCJyh-Shiarn Cherng
Jyh-Shiarn Cherng
QCQiang Chen
Qiang Chen
High power impulse magnetron sputtering (HiPIMS) is well known in modern physical vapor deposition (PVD) owing to its high peak power density, high degree of ionization, high plasma density and hence high ion flux towards the substrate that allows ones to deposit high quality thin films in comparison with conventional magnetron sputtering technology. The present short review on HiPIMS intends to provide readers with a summary of the current status of this emerging PVD technique: the developmental history, the plasma characterization, and the applications in hardness and functional thin film fabrications. Several items on the distinctive feature of HiPIMS, including self-sputtering mechanism, low deposition rate, arcing phenomenon and key factors of deposition process are reviewed in detail. To limit the scope, the emphasis is put on thermo-chromic VO2 thin film deposited by HiPIMS. Based on this typical issue, some classical ideas and approaches on fabrication of the functional thin films through HiPIMS technique are demonstrated.

25 January 2010 in Applied Physics Letters
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Journal Article
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BLBin Li
Bin Li
QCQiang Chen
Qiang Chen
ZLZ. W. Liu
Z. W. Liu
A large gap was acquired between electrodes (up to 5.5 mm) of Ar atmospheric pressure glow discharge in radio frequency dielectric barrier discharge (rf-DBD). The discharge of Ar plasma was characterized by I-V curve and Lissajous plot, and the effective power of the discharge was calculated based on the measured Lissajous plot and found to be higher than 90% of the input power. To gain a thorough understanding of the mechanism, the rf-DBD with a single dielectric barrier layer operating in γ mode glow discharge of N2 plasma was diagnosed in spatial resolution through optical emission spectroscopy. It was concluded that secondary electron emission might be responsible for the sustainable glow discharge in the large gap rf-DBD plasma.