Perovskite-based materials have attracted considerable attention in photoelectric devices. In this paper, we report the one-step fabrication of spin-coated CsPbBr_2.5I_0.5 perovskite films doped with PAN (polyacrylonitrile) polymer. A red perovskite LED (PeLED) composite film was fabricated which featured a maximum luminance value of 657 cd/m² at 8 V. We fabricated white PeLEDs by combining hole transporting layer material emission, perovskite–polymer composite material PAN:CsPbBr_2.5I_0.5, and pure inorganic perovskite CsPbBr₃ as a luminescent layer. The maximum luminance of the device was 360 cd/m² at 7 V, and the color coordinate was (0.31, 0.36). We obtained an ideal white light-emitting device that paves the way for further development of white PeLEDs.

Transparent electrodes (TEs) are important components in organic optoelectronic devices. ITO is the mostly applied TE material, which is costly and inferior in mechanical performance, and could not satisfy the versatile need for the next generation of transparent optoelectronic devices. Recently, many new TE materials emerged to try to overcome the deficiency of ITO, including graphene, ultrathin metal, and oxide-metal-oxide structure. By finely control of the fabrication techniques, the main properties of conductivity, transmittance, and mechanical stability, have been studied in the literatures, and their applicability in the potential optoelectronic devices has been reported. Herein, in this work, we summarized the recent progress of the TE materials applied in optoelectronic devices by focusing on the fabrication, properties, such as Graphene, ultra-thin metal film, and metal oxide and performance. The advantages and insufficiencies of these materials as TEs have been summarized and the future development aspects have been pointed out to guide the design and fabrication TE materials in the next generation of transparent optoelectronic devices.