Optics InfoBase is the Optical Society's online library for flagship journals, partnered and copublished journals, and recent proceedings from OSA conferences.

Nanometallic optical antennas are rapidly gaining popularity in applications that require exquisite control over light concentration and emission processes. The search is on for high-performance antennas that offer facile integration on chips. Here we demonstrate a new, easily fabricated optical antenna design that achieves an unprecedented level of control over fluorescent emission by combining concepts from plasmonics, radiative decay engineering and optical beaming. The antenna consists of a nanoscale plasmonic cavity filled with quantum dots coupled to a miniature grating structure that can be engineered to produce one or more highly collimated beams. Electromagnetic simulations and confocal microscopy were used to visualize the beaming process. The metals defining the plasmonic cavity can be utilized to electrically control the emission intensity and wavelength. These findings facilitate the realization of a new class of active optical antennas for use in new optical sources and a wide range of nanoscale optical spectroscopy applications.

We theoretically investigate the spontaneous emission process of an optical, dipolar emitter in metal-dielectric-metal slab and slot waveguide structures. We find that both structures exhibit strong emission enhancements at nonresonant conditions, due to the tight confinement of modes between two metallic plates. The large enhancement of surface plasmon-polariton excitation enables dipole emission to be preferentially coupled into plasmon waveguide modes. These structures find applications in creating nanoscale local light sources or in generating guided single plasmons in integrated optical circuits.

Atomically thin semiconducting oxide on graphene carries a unique combination of wide band gap, high charge carrier mobility, and optical transparency, which can be widely applied for optoelectronics. However, study on the epitaxial formation and properties of oxide monolayer on graphene remains unexplored due to hydrophobic graphene surface and limits of conventional bulk deposition technique. Here, we report atomic scale study of heteroepitaxial growth and relationship of a single-atom-thick ZnO layer on graphene using atomic layer deposition. We demonstrate atom-by-atom growth of zinc and oxygen at the preferential zigzag edge of a ZnO monolayer on graphene through in situ observation. We experimentally determine that the thinnest ZnO monolayer has a wide band gap (up to 4.0 eV), due to quantum confinement and graphene-like structure, and high optical transparency. This study can lead to a new class of atomically thin two-dimensional heterostructures of semiconducting oxides formed by highly controlled epitaxial growth.