The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In particular, the realization of large-area digital circuitry like flexible near field communication tags and analog integrated circuits such as bendable operational amplifiers is presented. The last topic of this review is devoted for emerging flexible electronic systems, from foldable displays, power transmission elements to integrated systems for large-area sensing and data storage and transmission. Finally, the conclusions are drawn and an outlook over the field with a prediction for the future is provided.

Electronics on very thin substrates have shown remarkable bendability, conformability and lightness, which are important attributes for biological tissues sensing, wearable or implantable devices. Here we propose a wafer-scale process scheme to realize ultra flexible, lightweight and transparent electronics on top of a 1-μm thick parylene film that is released from the carrier substrate after the dissolution in water of a polyvinyl– alcohol layer. The thin substrate ensures extreme flexibility, which is demonstrated by transistors that continue to work when wrapped around human hairs. In parallel, the use of amorphous oxide semiconductor and high-K dielectric enables the realization of analogue amplifiers operating at 12 V and above 1 MHz. Electronics can be transferred on any object, surface and on biological tissues like human skin and plant leaves. We foresee a potential application as smart contact lenses, covered with light, transparent and flexible devices, which could serve to monitor intraocular pressure for glaucoma disease.

Flexible large area electronics promise to enable new devices such as rollable displays and electronic skins. Radio frequency (RF) applications demand circuits operating in the megahertz regime, which is hard to achieve for electronics fabricated on amorphous and temperature sensitive plastic substrates. Here, we present self-aligned amorphous indium-gallium-zinc oxide-based thin-film transistors (TFTs) fabricated on free-standing plastic foil using fabrication temperatures . Self-alignment by backside illumination between gate and source/drain electrodes was used to realize flexible transistors with a channel length of 0.5 μm and reduced parasitic capacities. The flexible TFTs exhibit a transit frequency of 135 MHz when operated at 2 V. The device performance is maintained when the TFTs are bent to a tensile radius of 3.5 mm, which makes this technology suitable for flexible RFID tags and AM radios.