Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene–silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene–silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices.

Recent advances in graphene photonics reveal promising applications in the technologically important terahertz spectrum, where graphene-based active terahertz metamaterial modulators have been experimentally demonstrated. However, the sensitivity of the atomically thin graphene monolayer towards sharp Fano resonant terahertz metasurfaces remains unexplored. Here, we demonstrate thin-film sensing of the graphene monolayer with a high quality factor terahertz Fano resonance in metasurfaces consisting of a two-dimensional array of asymmetric resonators. A drastic change in the transmission amplitude of the Fano resonance was observed due to strong interactions between the monolayer graphene and the tightly confined electric fields in the capacitive gaps of the Fano resonator. The deep-subwavelength sensing of the atomically thin monolayer graphene further highlights the extreme sensitivity of the resonant electric field excited at the dark Fano resonance, allowing the detection of an analyte that is λ/1 000 000 thinner than the free space wavelength.

Dielectric metasurfaces have achieved great success in realizing high-efficiency wavefront control in the optical and infrared ranges. Here, we experimentally demonstrate several efficient, polarization-independent, all-silicon dielectric metasurfaces in the terahertz regime. The metasurfaces are composed of cylindrical silicon pillars on a silicon substrate, which can be easily fabricated using etching technology for semiconductors. By locally tailoring the diameter of the pillars, full control over abrupt phase changes can be achieved. To show the controlling ability of the metasurfaces, an anomalous deflector, three Bessel beam generators, and three vortex beam generators are fabricated and characterized. We also show that the proposed metasurfaces can be easily combined to form composite devices with extended functionalities. The proposed controlling method has promising applications in developing low-loss, ultra-compact spatial terahertz modulation devices.

Terahertz (THz) metamaterials are widely used in biosensor devices due to their unique superiority, and the demand for new high sensitivity biosensors based on THz metamaterials is increasing. This paper presents a polarization-insensitive terahertz metamaterial sensor used for BSA detection. Simulation reveals that the peak of transmission spectrum shifts obviously when the sensor is covered with analytes of different refractive index and thickness. After the sensor is covered with 10 μm thick non-destructive analytes, its sensitivity is as high as 135 GHz/RIU. Experiments show that the lowest detectable concentration of BSA solutions by this sensor is 0.1 mg/mL, the peak red shift of the transmission spectrum reaches 137 GHz when the concentration is 17.6 mg/mL, and the frequency shift percentage is 16.4%. This study provides a highly sensitive solution for biosensor detection in the pharmaceutical and food fields.