White organic light-emitting diodes (WOLEDs) with higher performance, which have enjoyed application in high-quality lighting sources, are here demonstrated with improved optical and electrical properties. The integration of a novel transparent distributed Bragg reflector (DBR), which consists of periodically alternating layers of atomic layer deposition-fabricated ZrO₂/Zircone films and sputtered tin-doped indium oxide into OLEDs microcavities were studied to obtain four-peak electroluminescence (EL) spectra. Three types of OLEDs with two-peak, three-peak, and four-peak EL spectra have been developed. The results of the two-peak spectra show that the DBR structures have an outstanding effect on carrier capture; as a result, the device exhibits a stronger stability in color at various applied voltages. The Commission Internationale de L’Eclairage (CIE) coordinates of the two-peak device at 5–13 V shows few displacements and a negligible slight variation of (±0.01, ±0.01). In addition, the four-peak WOLED also yields a high color purity white emission as the luminance changes from 100 cd m⁻² to 10,000 cd m⁻².

Molybdenum disulfide (MoS₂) field-effect transistors (FETs) with four different metallic electrodes (Au,Ag,Al,Cu) of drain-source were fabricated by mechanical exfoliation and vacuum evaporation methods. The mobilities of the devices were (Au) 21.01, (Ag) 23.15, (Al) 5.35 and (Cu) 40.52 cm²/Vs, respectively. Unpredictably, the on-state currents of four devices were of the same order of magnitude with no obvious difference. For clarifying this phenomenon, we calculated the Schottky barrier height (SBH) of the four metal–semiconductor contacts by thermionic emission theory and confirmed the existence of Fermi-level pinning (FLP). We suppose the FLP may be caused by surface states of the semiconductor produced from crystal defects.