This paper presents a comparative analysis of the structure and photoluminescence (PL) of Si containing dislocations introduced by thermal shock or ion implantation. To study the structure of dislocation cores and their interaction with point defects, we used a high-resolution transmission mode during in situ electron irradiation in the JEM4000EX operating at 400 kV. An appropriate PL spectrum was obtained on dislocated Si after electron irradiation by an external pulse gun operating at 350 kV. This resulted only in an increase in the D2 line intensity that correlated with the formation of metastable interstitial defects on {001}, {111}, and {113} planes near various dislocation cores during in situ electron irradiation, regardless of their types. However, the D1 line relates to a core structure of a shuffle Lomer dislocation consisting of 5/7 atomic rings, which occurs when two shuffle 60° dislocations (so-called S1 type [Pizzagalli et al., Phys. Rev. Lett. 103, 065505 (2009)]) combine with each other in intersecting {111} planes in plastically deformed Si or when an extrinsic Frank partial dislocation transforms into a perfect one in an ion-implanted layer.

In this paper, the initial stages of local anodic oxidation (LAO) process initiated by AFM probe are studied on the wide (∼100μm) terraces of the atomic-smooth Si (111) surface when creating dense array of local oxidation points. The dependence of LAO points height on the value of voltage initiating the oxidation is found to have a pronounced step-like feature with a characteristic period of 0.7 ± 0.1 nm. The presented analysis shows for the first time the realization of the step-layer mechanism of anodic oxide growth on the Si (111) surface.