Detection of single infrared photons in superconducting microstrips of 4 nm thick disordered Nb_0.15Re_0.85 has been investigated. Microstrips with a critical temperature of 5.15 K and widths from 1.0 to 2.5 μm have been fabricated by optical lithography. We demonstrate single photon detection sensitivity at 1.5 μm wavelength at a temperature of 1.79 K. By investigating the detection process at this temperature, we find that the current bias threshold is at 21% of the depairing current. This threshold is similar to what should be observed in typical amorphous superconductors, which confirms that ultrathin disordered Nb_0.15Re_0.85 is an interesting material for superconducting microstrip single photon detectors that operate above 1 K.

Three novel diketopyrrolopyrrole (DPP) based small molecules have been synthesized and characterized in terms of their chemical‐physical, electrochemical and electrical properties. All the molecules consist of a central DPP electron acceptor core symmetrically functionalized with donor bi‐thienyl moieties and flanked in the terminal positions by three different auxiliary electron‐acceptor groups. This kind of molecular structure, characterized by an alternation of electron acceptor and donor groups, was purposely designed to provide a significant absorption at the longer wavelengths of the visible spectrum: when analysed as thin films, in fact, the dyes absorb well over 800 nm and exhibit a narrow optical bandgap down to 1.28 eV. A detailed DFT analysis provides useful information on the electronic structure of the dyes and on the features of the main optical transitions. Organic field‐effect transistors (OFETs) have been fabricated by depositing the DPP dyes as active layers from solution: the different end‐functionalization of the dyes had an effect on the charge‐transport properties with two of the dyes acting as n‐type semiconductors (electron mobility up to 4.4 ⋅ 10⁻² cm²/V ⋅ s) and the third one as a p‐type semiconductor (hole mobility up to 2.3 ⋅ 10⁻³ cm²/V ⋅ s). Interestingly, well‐balanced ambipolar transistors were achieved by blending the most performant n‐type and p‐type dyes with hole and electron mobility in the order of 10⁻³ cm²/V ⋅ s

Core-cyanated perylene diimide (PDI_CY) derivatives are molecular compounds exhibiting an uncommon combination of appealing properties, including remarkable oxidative stability, high electron affinities, and excellent self-assembling properties. Such features made these compounds the subject of study for several research groups aimed at developing electron-transporting (n-type) devices with superior charge transport performances. After about fifteen years since the first report, field-effect transistors based on PDI_CY thin films are still intensely investigated by the scientific community for the attainment of n-type devices that are able to balance the performances of the best p-type ones. In this review, we summarize the main results achieved by our group in the fabrication and characterization of transistors based on PDI8-CN₂ and PDIF-CN₂ molecules, undoubtedly the most renowned compounds of the PDI_CY family. Our attention was mainly focused on the electrical properties, both at the micro and nanoscale, of PDI8-CN₂ and PDIF-CN₂ films deposited using different evaporation techniques. Specific topics, such as the contact resistance phenomenon, the bias stress effect, and the operation in liquid environment, have been also analyzed.

Contact resistance effects in n-type organic field-effect transistors (OFETs) based on perylene-diimide thin films and monolayer CVD graphene electrodes have been investigated by using Scanning Kelvin Probe Force Microscopy (SKPFM). SKPFM voltage profiles were acquired as a function of the applied drain–source (V_ds) and gate–source (V_gs) voltages and in the temperature range between 300 and 360 K. The results were compared with those obtained for hybrid devices bearing contemporarily a gold and a graphene electrode, in order to highlight the specific behaviors of the graphene/organic and gold/organic interfaces. Despite the fact that overall electrical performances of devices based on gold and graphene contacts are fully comparable, the SKPFM analysis demonstrates unambiguously that the physical mechanisms driving the charge injection and extraction phenomena are distinctive based on the electrode type. While for OFETs with gold electrodes, the R_C effect is mainly ascribable to the degraded quality of the charge transport in the semiconducting film regions close to the electrodes, for graphene-based devices, it is related to the presence of a Schottky-like barrier at the injecting electrode.