In this work, the dual junction-high-electron-mobility-transistor (DJ-HEMT) was investigated. The thin AlGaN was grown between the p-GaN gate and gate metal. In the TCAD simulations, the band gap and electric field were shown in this letter, proving the dual junction forming. Moreover, DJ-HEMT shows the high gate voltage swing due to the dual junction at the gate region of device, which enhance gate performance. By contrast with standard p-GaN HEMT (ST-HEMT), DJ-HEMT shows higher $\text{V}_{\text {TH}}$ of 2V, saturation current of 187mA/mm, $\text{I}_{\text {ON}}/\text{I}_{\text {OFF}}$ ratio of $5.1\times 10^{{8}}$ and gate swing voltage which is higher than 20V. In addition, DJ-HEMT also shows the lower device leakage current and superior life time measurement due to the thicker and higher barrier of AlGaN cap layer.

A normally-OFF p-GaN gate AlGaN/GaN high-electron-mobility transistor with high ON-state resistance ( ${R}_{ \mathrm{\scriptscriptstyle ON}}$ ) uniformity was realized using a self-terminated digital etching technique. ${R}_{ \mathrm{\scriptscriptstyle ON}}$ uniformity control was improved by simultaneously using an AlN etching stop layer in an epitaxial design and a novel digital etching procedure. Digital etching includes the multiple-cycle oxidation and the wet etching of p-GaN layers and provides easy control of p-GaN removal depth and surface damage reduction at the gate-to-drain and gate-to-source spacing areas. Low-frequency noise and pulse measurements indicated that device surface traps and current collapse phenomena were suppressed.

A bipolar resistive switching memory device with a low power operation in a structure is investigated. A high quality solid electrolyte is confirmed by X-ray photoelectron spectroscopy. The resistive memory device with a small via size of has a large threshold voltage of , high resistance ratio of , and good uniformity. The switching mechanisms are due to the Cu metallic filament formation and dissolution from the solid electrolyte under positive and negative biases, respectively, which have been confirmed by high resolution transmission electron microscopy image and energy-dispersive X-ray spectroscopy analysis. The strong Cu filament formation can also be investigated by monitoring the erase voltage and erase current. Good endurance of is obtained. Excellent data retention characteristics at are observed after 24 h of retention time, owing to the strong Cu metallic filament formation in the solid electrolyte.

In this paper, a novel normally-off p-gallium nitride (GaN) gate high electron-mobility transistor (HEMT) with composite AlN/Al₀ׅ₁₇Ga₀ׅ₈₃N/Al₀ׅ₃Ga₀ׅ₇N barrier layers is proposed. Compared to the standard (STD) p-GaN/AlGaN/GaN HEMT structure, the composite barriers (CB) with AlN etch-stop layer can effectively improve the uniformity of the device threshold voltage (VTH) and reduce the leakage current. The CB p-GaN gate HEMT achieved a VTH of 1.7 ± 0.06 V; this value was 2.1 ± 0.2 V for STD HEMT. In addition, the off-state drain leakage current was suppressed one order of magnitude by adopting a composite barrier design.

In this article, high-performance vertical gallium nitride (GaN)-on-GaN Schottky barrier diodes (SBDs) with helium (He)-implanted edge termination (ET) structure were demonstrated for the first time. Owing to the feature of He-implanted ET structure, the peak electric field crowding effect underneath the Schottky contact metal edge has been significantly reduced, thus increasing the breakdown voltage ${V}_{{\mathrm {BR}}}$ of the diodes. Under the same testing conditions, ${V}_{{\mathrm {BR}}}$ was increased from 862 to 1725 V for the devices with He-implanted ET structure, which also have low specific differential ON-resistance ${R}_{{\scriptscriptstyle {\mathrm {ON}}}}$ of 5.1 $\text{m}\Omega \cdot {\mathrm {cm}}^{2}$ and low turn-on voltage ${V}_{{\scriptscriptstyle {\mathrm {ON}}}}$ of 0.63 V. Given ${V}_{{\scriptscriptstyle {\mathrm {ON}}}}$ of < 0.7 V, the vertical GaN SBDs with He-implanted ET structure show the highest ${V}_{{\mathrm {BR}}}$ in the reported work up to today.