The development and application of artificial intelligence have led to the exploitation of low‐power and compact intelligent information‐processing systems integrated with sensing, memory, and neuromorphic computing functions. The 2D van der Waals (vdW) materials with abundant reservoirs for arbitrary stacking based on functions and enabling continued device downscaling offer an attractive alternative for continuously promoting artificial intelligence. In this study, full 2D SnS₂/h‐BN/CuInP₂S₆ (CIPS)‐based ferroelectric field‐effect transistors (Fe‐FETs) and utilized light‐induced ferroelectric polarization reversal to achieve excellent memory properties and multi‐functional sensing‐memory‐computing vision simulations are designed. The device exhibits a high on/off current ratio of over 10⁵, long retention time (>10⁴ s), stable cyclic endurance (>350 cycles), and 128 multilevel current states (7‐bit). In addition, fundamental synaptic plasticity characteristics are emulated including paired‐pulse facilitation (PPF), short‐term plasticity (STP), long‐term plasticity (LTP), long‐term potentiation, and long‐term depression. A ferroelectric optoelectronic reservoir computing system for the Modified National Institute of Standards and Technology (MNIST) handwritten digital recognition achieved a high accuracy of 93.62%. Furthermore, retina‐like light adaptation and Pavlovian conditioning are successfully mimicked. These results provide a strategy for developing a multilevel memory and novel neuromorphic vision systems with integrated sensing‐memory‐processing.

Flexible and transparent resistive switching memories are highly desired for the construction of portable and even wearable electronics. Upon optimization of the microstructure wherein an amorphous-nanocrystalline hafnium oxide thin film is fabricated, an all-oxide based transparent RRAM device with stable resistive switching behavior that can withstand a mechanical tensile stress of up to 2.12% is obtained. It is demonstrated that the superior electrical, thermal and mechanical performance of the ITO/HfO_x/ITO device can be ascribed to the formation of pseudo-straight metallic hafnium conductive filaments in the switching layer, and is only limited by the choice of electrode materials. When the ITO bottom electrode is replaced with platinum metal, the mechanical failure threshold of the device can be further extended.

The quantum anomalous Hall effect (QAHE) is a fundamental quantum transport phenomenon that manifests as a quantized transverse conductance in response to a longitudinally applied electric field in the absence of an external magnetic field, and it promises to have immense application potential in future dissipationless quantum electronics. Here, we present a novel kinetic pathway to realize the QAHE at high temperatures by $n\text{−}p$ codoping of three-dimensional topological insulators. We provide a proof-of-principle numerical demonstration of this approach using vanadium-iodine (V-I) codoped ${\mathrm{Sb}}_2{\mathrm{Te}}_3$ and demonstrate that, strikingly, even at low concentrations of $\sim 2\%\mathrm{V}$ and $\sim 1\%$ I, the system exhibits a quantized Hall conductance, the telltale hallmark of QAHE, at temperatures of at least $\sim 50\mathrm{K}$, which is 3 orders of magnitude higher than the typical temperatures at which it has been realized to date. The underlying physical factor enabling this dramatic improvement is tied to the largely preserved intrinsic band gap of the host system upon compensated $n\text{−}p$ codoping. The proposed approach is conceptually general and may shed new light in experimental realization of high-temperature QAHE.

Layer-dependent ferroelectric polarization in 2H-stacked α-In ₂ Se ₃ attributed to a 180 degree in-plane rotation in the adjacent layers is reported.

Two-dimensional (2D) van der Waals (vdW) magnetic materials with reduced dimensionality often exhibit unexpected properties compared to their bulk counterparts. In particular, the mechanical flexibility of 2D structure, enhanced ferromagnetism at reduced layer thickness, as well as robust perpendicular magnetic anisotropy are quite appealing for constructing novel spintronic devices. The vdW vanadium diselenide (VSe₂) is an attractive material whose bulk is paramagnetic while monolayer is ferromagnetic with a Curie temperature (T_c) above room temperature. To explore its possible device applications, a detailed investigation on the thickness-dependent magnetism and strain modulation behavior of VSe₂ is highly demanded. In this article, the VSe₂ nanoflakes were controllably prepared via chemical vapor deposition (CVD) method. The few-layer single VSe₂ nanoflakes were found to exhibit magnetic domain structures at room temperature. Ambient magnetic force microscopy (MFM) phase images reveal a clear thickness-dependent magnetism and the MFM phase contrast is traceable for the nanoflakes of layer thickness below ∼ 6 nm. Moreover, applying strain is found efficient in modulating the magnetic moment and coercive field of 2D VSe₂ at room temperature. These results are helpful for understanding the ferromagnetism of high temperature 2D magnets and for constructing novel straintronic devices or flexible spintronic devices.