Rui Chen

Rui Chen


Research Focus & Metrics

Academic Career Length

17Years (2010-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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14 December 2018 in Advanced Materials
Verified
Journal Article
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ALAlei Li
Alei Li
QCQianxue Chen
Qianxue Chen
PWPeipei Wang
Peipei Wang
YGYuan Gan
Yuan Gan
TQTailei Qi
Tailei Qi
YGYoupin Gong
Youpin Gong

27 April 2021 in Journal of the American Chemical Society
Verified
Journal Article
Closed access
JWJiantao Wang
Jiantao Wang
JLJinhua Li
Jinhua Li
YZYecheng Zhou
Yecheng Zhou
CYChengzhuo Yu
Chengzhuo Yu
YHYuhui Hua
Yuhui Hua
HWHsing-Lin Wang
Hsing-Lin Wang

23 August 2019 in Nano Letters
Verified
Journal Article
Closed access
SWSheng Wang
Sheng Wang
JYJiahao Yu
Jiahao Yu
MZMinyi Zhang
Minyi Zhang
DCDechao Chen
Dechao Chen
CLChunsen Li
Chunsen Li
Xuyong YangXuyong Yang
Xuyong Yang

7 April 2020 in InfoMat
Verified
Journal Article
Open access
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JYJiahao Yu
Jiahao Yu
RCRui Chen
Rui Chen
Compared with zero‐dimensional quantum dots and one‐dimensional nanorods, two‐dimensional nanoplatelets exhibit many unique optical properties. Due to strong quantum confinement in only one direction and the large lateral size, the CdSe nanoplatelets show large exciton binding energy, giant oscillator strength, narrow emission, large absorption cross‐section, and large optical gain. In this review, the development of synthesis technology of nanoplatelets is first briefly introduced. Subsequently, the optical properties of CdSe nanoplatelets and their heterostructures are reviewed, including absorption and photoluminescence, carrier dynamics, optical gain, and nonlinear properties. These optical properties are affected by size, material and structure. At last, the main applications of CdSe nanoplatelets in recent years are introduced, including light‐emitting diodes, lasers, light harvesting, photocatalysis, and sensing. image

14 July 2020 in ACS Energy Letters
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Journal Article
Closed access
ZRZhenwei Ren
Zhenwei Ren
LLLing Li
Ling Li
JYJiahao Yu
Jiahao Yu
RMRuiman Ma
Ruiman Ma
XXXiangtian Xiao
Xiangtian Xiao
WCWallace Choy
Wallace Choy

3 December 2018 in Applied Physics Letters
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Journal Article
Closed access
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HLHaolin Li
Haolin Li
JTJilong Tang
Jilong Tang
YKYubin Kang
Yubin Kang
HZHaixia Zhao
Haixia Zhao
DFDan Fang
Dan Fang
ZWZhipeng Wei
Zhipeng Wei
The GaAsSb-based quantum well plays a very important role in optoelectronic devices due to its excellent wavelength tunability. When the dimension reduces, the quantum confinement effect will take place and the quantum well in nanowires will show many interesting characteristics. GaAsSb-based quantum-well nanowires are of contemporary interest. However, the properties of the quasi-type-II structure in a single quantum well nanowire have been rarely investigated. Here, we grow GaAs/GaAs0.92Sb0.08/GaAs coaxial single quantum-well nanowires and discussed their power-dependent and temperature-dependent photoluminescence. We find that due to the small band offset of conduction bands, both type-I like and type-II like emission exist in our nanowires. When electrons obtain enough thermal energy through collisions or surrounding environment, they will overcome the barrier and diffuse to the GaAs conduction band, which contributes to the type-II like recombination. These results show the optical property of the quasi-type-II quantum well in nanowires, which can pave the way toward future nanoscale quantum well devices.