Zinc oxide (ZnO) is a fascinating wide band gap semiconductor material with many properties that make it widely studied in the material science, physics, chemistry, biochemistry, and solid-state electronics communities. Its transparency, possibility of bandgap engineering, the possibility to dope it into high electron concentrations, or with many transition or rare earth metals, as well as the many structures it can form, all explain the intensive interest and broad applications. This review aims to showcase ZnO as a very versatile material lending itself both to bottom-up and top-down fabrication, with a focus on the many devices it enables, based on epitaxial structures, thin films, thick films, and nanostructures, but also with a significant number of unresolved issues, such as the challenge of efficient p-type doping. The aim of this article is to provide a wide-ranging cross-section of the current state of ZnO structures and technologies, with the main development directions underlined, serving as an introduction, a reference, and an inspiration for future research.

In various material systems, an antiferromagnetic phase was found to coexist with a weak ferromagneticlike signal, while symmetry-based theoretical predictions indicate a possibility of a nonzero anomalous Hall effect (AHE) even in the absence of sample magnetization. This is the case of nominally collinear antiferromagnets, in particular, hexagonal MnTe, where the AHE and no detectable magnetization have been recently reported. To clarify the role of magnetization, we present a study of bulk MnTe samples, combining experiment and theory. We demonstrate that the existence of the AHE in the hexagonal MnTe is accompanied by the presence of a weak but detectable ferromagneticlike signal, vanishing at the Néel temperature. In contrast to thin layer samples, we find that the AHE hysteresis loop shows an opposite sign and Barkhausen-like jumps. We introduce a macrospin model involving the Dzyaloshinskii–Moriya type interaction, which explains the existence of a nonzero magnetic moment in the absence of external field and reproduces well hysteretic behavior of the AHE. Using analysis of Néel-vector-dependent Berry curvature, we show that the intrinsic AHE in hexagonal MnTe can be nonzero even when the magnetization vanishes and, also, that it changes sign depending on the Fermi energy position. Published by the American Physical Society 2024

The photocatalytic degradation of the wastewater dye pollutant methylene blue (MB) at ZnO nanostructured porous thin films, deposited by direct current reactive magnetron sputtering on Si substrates, was studied. It was observed that over 4 photocatalytic cycles (0.3 mg · l⁻¹ MB solution, 540 minUV irradiation), the rate constant k of MB degradation decreased by ∼50%, varying in the range (1.54 ÷ 0.78) · 10^–9 (mol·l⁻¹·min⁻¹). For a deeper analysis of the photodegradation mechanism, detailed information on the nanostructured ZnO surface morphology and local surface and subsurface chemistry (nonstoichiometry) were obtained by using scanning electron microscopy (SEM) and x-ray photoelectron spectroscopy (XPS) as complementary analytical methods. The SEM studies revealed that at the surface of the nanostructured ZnO thin films a coral reef structure containing polycrystalline coral dendrites is present, and that, after the photocatalytic experiments, the sizes of individual crystallites increased, varying in the range 43 ÷ 76 nm for the longer axis, and in the range 28 ÷ 58 nm for the shorter axis. In turn, the XPS studies showed a slight non-stoichiometry, mainly defined by the relative [O]/[Zn] concentration of ca. 1.4, whereas [C]/[Zn] was ca. 1.2, both before and after the photocatalytic experiments. This phenomenon was directly related to the presence of superficial ZnO lattice oxygen atoms that can participate in the oxidation of the adsorbed MB molecules, as well as to the presence of surface hydroxyl groups acting as hole-acceptors to produce OH· radicals, which can be responsible for the generation of superoxide ions. In addition, after experiments, the XPS measurements revealed the presence of carboxyl and carbonyl functional groups, ascribable to the oxidation by-products formed during the photodegradation of MB.

The fabrication of low-resistance and thermal stable ohmic contacts is important for realization of reliable SiC devices. For then-type SiC, Ni-based metallization is most commonly used for Schottky and ohmic contacts. Many experimental studies have been performed in order to understand the mechanism of ohmic contact formation and different models were proposed to explain the Schottky to ohmic transition for Ni/SiC contacts. In the present review, we summarize the last key results on the matter and post open questions concerning the unclear issues of ohmic contacts ton-type SiC. Analysis of the literature data and our own experimental observations have led to the conclusion that the annealing at high temperature leads to the preferential orientation of silicide at the heterointerface (0001)SiC//(013)δ-Ni₂Si. Moreover, we may conclude that onlyδ-Ni₂Si grains play a key role in determining electrical transport properties at the contact/SiC interface. Finally, we show that the diffusion barriers with free diffusion path microstructure can improve thermal stability of metal-SiC ohmic contacts for high-temperature electronics.

The physical properties of the 2D MOF Ni₃(HITP)₂ synthesized in batches under different conditions are analysed to understand which variables govern the capacitive behaviour of supercapacitor electrodes prepared using the neat MOF material.

The recent rapid development of transparent electronics, notably displays and control circuits, requires the development of highly transparent energy storage devices, such as supercapacitors. The devices reported to date utilize carbon-based electrodes for high performance, however at the cost of their low transparency around 50%, insufficient for real transparent devices. To overcome this obstacle, in this communication highly transparent supercapacitors were fabricated based on ZnO/MnO₂ nanostructured electrodes. ZnO served as an intrinsically transparent skeleton for increasing the electrode surface, while MnO₂ nanoparticles were applied for high capacitance. Two MnO₂ synthesis routes were followed, based on the reaction of KMnO₄ with Mn(Ac)₂ and PAH, leading to the synthesis of β-MnO₂ with minority α-MnO₂ nanoparticles and amorphous MnO₂ with embedded β-MnO₂, respectively. The devices based on such electrodes showed high capacitances of 2.6 mF cm⁻² and 1.6 mF cm⁻², respectively, at a scan rate of 1 mV s⁻¹ and capacitances of 104 μF cm⁻² and 204 μF cm⁻² at a very high rate of 1 V s⁻¹, not studied for transparent supercapacitors previously. Additionally, the Mn(Ac)₂ devices exhibited very high transparencies of 86% vs. air, far superior to other transparent energy storage devices reported with similar charge storage properties. This high device performance was achieved with a non-acidic LiCl gel electrolyte, reducing corrosion and handling risks associated with conventional highly concentrated acidic electrolytes, enabling applications in safe, wearable, transparent devices.