The conversion of CO₂ into desirable multicarbon products via the electrochemical reduction reaction holds promise to achieve a circular carbon economy. Here, we report a strategy in which we modify the surface of bimetallic silver-copper catalyst with aromatic heterocycles such as thiadiazole and triazole derivatives to increase the conversion of CO₂ into hydrocarbon molecules. By combining operando Raman and X-ray absorption spectroscopy with electrocatalytic measurements and analysis of the reaction products, we identified that the electron withdrawing nature of functional groups orients the reaction pathway towards the production of C₂₊ species (ethanol and ethylene) and enhances the reaction rate on the surface of the catalyst by adjusting the electronic state of surface copper atoms. As a result, we achieve a high Faradaic efficiency for the C₂₊ formation of ≈80% and full-cell energy efficiency of 20.3% with a specific current density of 261.4 mA cm⁻² for C₂₊ products.

As the challenges in continued scaling of the integrated circuit technology escalate every generation, there is an urgent need to find viable solutions for both the front-end-of-line (transistors) and the back-end-of-line (interconnects). For the interconnect technology, it is crucial to replace the conventional barrier and liner with much thinner alternatives so that the current driving capability of the interconnects can be maintained or even improved. Due to the inherent atomically thin body thicknesses, 2D materials have recently been proposed and explored as Cu diffusion barrier alternatives. In this Perspective article, a variety of 2D materials that have been studied, ranging from graphene, h-BN, MoS₂, WSe₂ to TaS₂, will be reviewed. Their potentials will be evaluated based on several criteria, including fundamental material properties as well as the feasibility for technology integration. Using TaS₂ as an example, we demonstrate a large set of promising properties and point out that there remain challenges in the integration aspects with a few possible solutions waiting for validation. Applications of 2D materials for other functions in Cu interconnects and for different metal types will also be introduced, including electromigration, cobalt interconnects, and radio-frequency transmission lines.

Successful doping of single-layer transition metal dichalcogenides (TMDs) remains a formidable barrier to their incorporation into a range of technologies. We use density functional theory to study doping of molybdenum and tungsten dichalcogenides with a large fraction of the periodic table. An automated analysis of the energetics, atomic and electronic structure of thousands of calculations results in insightful trends across the periodic table and points out promising dopants to be pursued experimentally. Beyond previously studied cases, our predictions suggest promising substitutional dopants that result in p-type transport and reveal interesting physics behind the substitution of the metal site. Doping with early transition metals (TMs) leads to tensile strain and a significant reduction in the bandgap. The bandgap increases and strain is reduced as the d-states are filled into the mid TMs; these trends reverse as we move into the late TMs. Additionally, the Fermi energy increases monotonously as the d-shell is filled from the early to mid TMs and we observe few to no gap states, indicating the possibility of both p- (early TMs) and n- (mid TMs) type doping. Quite surprisingly, the simulations indicate the possibility of interstitial doping of TMDs; the energetics reveal that a significant number of dopants, increasing in number from molybdenum disulfide to diselenide and to ditelluride, favor the interstitial sites over adsorbed ones. Furthermore, calculations of the activation energy associated with capturing the dopants into the interstitial site indicate that the process is kinetically possible. This suggests that interstitial impurities in TMDs are more common than thought to date and we propose a series of potential interstitial dopants for TMDs relevant for application in nanoelectronics based on a detailed analysis of the predicted electronic structures.