Kazunari Kurita received his B.E. degree in electronics engineering from Akita University, Akita, Japan, in 1991 and his M.E. degree in electronics engineering from Tohoku University, Sendai, Miyagi, Japan, in 1993. He received his Ph.D. degree in electrical and electronics engineering from Kanagawa Institute of Technology (KIT), Atsugi, Kanagawa, Japan, in 2002. From 1993 to 2001, he was a research member of the Central Research Institute of Mitsubishi Materials Corporation, Omiya Saitama, Japan. In 2002, he joined the SUMCO Corporation, Tokyo, Japan. He invented the novel gettering technology for advanced CMOS image sensors using a hydrocarbon molecular ion implantation technique.
He has published 50 peer reviewed papers covering gettering technology for CMOS image sensors, and is the holder of more than 250 Japanese and U.S. patents. His current research focuses include the silicon wafer gettering process and the development of metallic impurity contamination analysis techniques, such as deep-level transient spectroscopy (DLTS) and microwave photo-conductance decay lifetime measurement (microwave-PCD) techniques. Since 2016, he has been a General Manager of the R&D Division in the SUMCO Corporation. As an honorary award, he received the 23th SSSJ Technical Award from The Surface Science Society of Japan in 2017.
Research Keywords & Expertise
silicon wafer
CMOS image sensor
gettering
dark current
point defects
metallic impurity cont...
Fingerprints
64%
silicon wafer
53%
gettering
48%
CMOS image sensor
15%
dark current
8%
point defects
5%
metallic impurity contamination
Short Biography
Kazunari Kurita received his B.E. degree in electronics engineering from Akita University, Akita, Japan, in 1991 and his M.E. degree in electronics engineering from Tohoku University, Sendai, Miyagi, Japan, in 1993. He received his Ph.D. degree in electrical and electronics engineering from Kanagawa Institute of Technology (KIT), Atsugi, Kanagawa, Japan, in 2002. From 1993 to 2001, he was a research member of the Central Research Institute of Mitsubishi Materials Corporation, Omiya Saitama, Japan. In 2002, he joined the SUMCO Corporation, Tokyo, Japan. He invented the novel gettering technology for advanced CMOS image sensors using a hydrocarbon molecular ion implantation technique.
He has published 50 peer reviewed papers covering gettering technology for CMOS image sensors, and is the holder of more than 250 Japanese and U.S. patents. His current research focuses include the silicon wafer gettering process and the development of metallic impurity contamination analysis techniques, such as deep-level transient spectroscopy (DLTS) and microwave photo-conductance decay lifetime measurement (microwave-PCD) techniques. Since 2016, he has been a General Manager of the R&D Division in the SUMCO Corporation. As an honorary award, he received the 23th SSSJ Technical Award from The Surface Science Society of Japan in 2017.
Honors and Awards
The 23th SSSJ Technical Award from The Surface Science Society of Japan in 2017