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kazunari kurita

Dr. kazunari kurita

SUMCO R&D center

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Kazunari Kurita received his B.E. degree in electronics engineering from Akita University, Akita, Japan, in 1991 and his M.E. degree in electronics engineering from Tohoku University, Sendai, Miyagi, Japan, in 1993. He received his Ph.D. degree in electrical and electronics engineering from Kanagawa Institute of Technology (KIT), Atsugi, Kanagawa, Japan, in 2002. From 1993 to 2001, he was a research member of the Central Research Institute of Mitsubishi Materials Corporation, Omiya Saitama, Japan. In 2002, he joined the SUMCO Corporation, Tokyo, Japan. He invented the novel gettering technology for advanced CMOS image sensors using a hydrocarbon molecular ion implantation technique. He has published 50 peer reviewed papers covering gettering technology for CMOS image sensors, and is the holder of more than 250 Japanese and U.S. patents. His current research focuses include the silicon wafer gettering process and the development of metallic impurity contamination analysis techniques, such as deep-level transient spectroscopy (DLTS) and microwave photo-conductance decay lifetime measurement (microwave-PCD) techniques. Since 2016, he has been a General Manager of the R&D Division in the SUMCO Corporation. As an honorary award, he received the 23th SSSJ Technical Award from The Surface Science Society of Japan in 2017.

Research Keywords & Expertise

silicon wafer
CMOS image sensor
gettering
dark current
point defects

Fingerprints

64%
silicon wafer
53%
gettering
48%
CMOS image sensor
15%
dark current
8%
point defects
5%
metallic impurity contamination

Short Biography

Kazunari Kurita received his B.E. degree in electronics engineering from Akita University, Akita, Japan, in 1991 and his M.E. degree in electronics engineering from Tohoku University, Sendai, Miyagi, Japan, in 1993. He received his Ph.D. degree in electrical and electronics engineering from Kanagawa Institute of Technology (KIT), Atsugi, Kanagawa, Japan, in 2002. From 1993 to 2001, he was a research member of the Central Research Institute of Mitsubishi Materials Corporation, Omiya Saitama, Japan. In 2002, he joined the SUMCO Corporation, Tokyo, Japan. He invented the novel gettering technology for advanced CMOS image sensors using a hydrocarbon molecular ion implantation technique. He has published 50 peer reviewed papers covering gettering technology for CMOS image sensors, and is the holder of more than 250 Japanese and U.S. patents. His current research focuses include the silicon wafer gettering process and the development of metallic impurity contamination analysis techniques, such as deep-level transient spectroscopy (DLTS) and microwave photo-conductance decay lifetime measurement (microwave-PCD) techniques. Since 2016, he has been a General Manager of the R&D Division in the SUMCO Corporation. As an honorary award, he received the 23th SSSJ Technical Award from The Surface Science Society of Japan in 2017.

Honors and Awards

The 23th SSSJ Technical Award from The Surface Science Society of Japan in 2017

https://doi.org/10.14886/sssj2008.37.0_53

The Surface Science Society of Japan