The electrical and photosensitive characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) related to the oxygen vacancies V̈_O are discussed. With the filling of V̈_O of ratio from 14 to 8, the electron density of the a-IGZO channel decreases from 7.5 to 3.8 ( ×10¹⁶ cm^-3); the saturation mobility of the TFT decreases from 3.1 to 1.4 cm^-2/(V · s); the threshold voltage increases from 7 to 11 V for the TFT with a lower on-current; and the subthreshold slope increases from 2.4 to 4.4 V/dec for the TFT with a higher interface defect density of 4.9 × 10¹¹ cm^-2, the worst electrical stability of V_th ~ 10 V, and a hysteresis-voltage decrease from 3.5 to 2 V. The photoreaction properties of a-IGZO TFTs are also sensitive to the oxygen-content-related absorption of the a-IGZO channel. With the lowest content of oxygen in the channel, the TFT has the largest photocurrent gain of 50 μA (V_g = 30 V; V_d = 10 V) and decrease in V_th ( V_th V) at a high light intensity. The light-induced change of TFT characteristics is totally reversible with the time constant for recovery of about 2.5 h.

Bunches of needle-shaped silicon carbide (SiC) nanowires were grown from commercially available SiC powders in thermal evaporation process and using iron as catalyst. Their structure and chemical composition were studied by Raman spectroscopy and high-resolution transmission electron microscopy. The powder of these nanowires may be easily dispersed, and was used to form samples of field electron emitters. The needle shape of individual nanowires is well-suited to field electron emission. Stable emission with current density of $\text{30.8\hspace{0.5em}}{\mathrm{mA/cm}}^2$ was observed at fields as low as 9.6 V/μm, and current density of up to $\text{83\hspace{0.5em}}{\mathrm{mA/cm}}^2$ was recorded.

Large-area, quasialigned nanotips of tungsten oxide have been grown by a two-step high-temperature, catalyst-free, physical evaporation deposition process. The tungsten oxide nanotips are single crystalline with growth direction of [010]. The tungsten oxide nanotips exhibit excellent field-emission properties with a low threshold field (for an emission current density of $10\mathrm{mA}∕{\mathrm{cm}}^2$ ) $\sim 4.37\mathrm{MV}∕\mathrm{m}$ and uniform emission from the entire arrays, as well as high time stability. These results make tungsten oxide nanotip arrays a competitive candidate for field-emission displays.

Straight crystalline copper sulphide $({\mathrm{Cu}}_2\mathrm{S})$ nanowire arrays have been grown by using a simple gas–solid reaction at room temperature. These were demonstrated to exhibit semiconductor properties. Field emission was observed at a field of $\text{∼6\hspace{0.17em}}\mathrm{MV}/\mathrm{m},$ and its current-field characteristics deviate from Fowler–Nordheim theory, i.e., showing a nonlinear Fowler–Nordheim plot. The uniform emission from the whole arrays was observed using transparent anode technique, and their variation with applied field was recorded. The emission from individual nanowires was also studied using a field emission microscope, and was found to consist of a number of spatially resolved diffuse spots. Finally, stable emission current at different levels and over time was recorded. These findings indicate that semiconductor nanowires as cold cathode have a potential future, worthy of further comprehensive investigation. The technical importance of using semiconductor nanowires as cold cathode emitter is given.