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β-Ga₂O₃ epitaxial thin films were deposited using laser molecular beam epitaxy technique and oxygen atmosphere in situ annealed in order to reduce the oxygen vacancy. Metal/semiconductor/metal structured photodetectors were fabricated using as-grown film and annealed film separately. Au/Ti electrodes were Ohmic contact with the as-grown films and Schottky contact with the annealed films. In compare with the Ohmic-type photodetector, the Schottky-type photodetector takes on lower dark current, higher photoresponse, and shorter switching time, which benefit from Schottky barrier controlling electron transport and the quantity of photogenerated carriers trapped by oxygen vacancy significant decreasing.

A self-powered ultraviolet photodetector with an extremely high responsivity (54.43 mA W⁻¹) was fabricated by constructing p–n junction of GaN/Ga₂O₃ films.