Prof. Dr. Run-Wei Li is a full professor at the Ningbo Institute of Materials Technology and Engineering, the Chinese Academy of Sciences (CAS), and director of CAS Key Laboratory of Magnetic Materials and Devices, China. After receiving his PhD from the Institute of Physics, CAS, in July 2002, he worked at Osaka University, Japan, and the University of Kaiserslautern, Germany, and joined CAS as a professor in 2008 under “The Hundred Talents Program.” His research interests focus on flexible magnetic and electronic materials and devices for new storage and sensing technology, including flexible or elastic electronic materials and sensors, Resistive Random Access Memory (RRAM) materials, physics and devices, etc. He discovered the super-large anisotropic magnetoresistance effect in manganese oxide and the room temperature conductance quantization effect in RRAM devices and designed and developed elastic wires and electrodes, flexible magnetic sensors, elastic stress and strain sensors, etc. He has published more than 200 papers, is the editor-in-chief of two books and filed more than 180 granted invention patents.