An isostructural series of anion radical salts, β'-(Et_xMe_4−xZ)[Pd(dmit)₂]₂ (x = 0–2, Z = P, As, Sb), with a quasi-triangular lattice comprising the dimer unit [Pd(dmit)₂]₂⁻ belong to a strongly correlated electron system with geometrical frustration. Intra and interdimer transfer integrals between the frontier molecular orbitals, which characterize the strength of electron correlation and degree of frustration, can be tuned by selection of the counter cation. We have systematically analyzed the crystal structure with X-ray diffraction method and intermolecular transfer integrals using extended Hückel molecular orbital calculations based on structural data. The variation in the cation affects the unit cell in a manner equivalent to an anisotropic pressure. Increasing the covalent radius of the central atom Z and the number of ethyl groups (x) in the cation leads to slight arching of the Pd(dmit)₂ molecule. This arch-shaped distortion of the Pd(dmit)₂ molecule modifies the interdimer transfer integrals in formation of the regular triangular dimer lattice. On the other hand, the intradimer transfer integral, which is correlated with the effective on-site Coulomb interaction of the dimer, is weakly dependent on the type of cation.

The πd molecular conductor λ‐(BETS)2FeCl4, where BETS is bis(ethylenedithio) tetraselenafulvalene, has attracted considerable interest for the discovery of its field induced superconducting state. A mystery of this system is its antiferromagnetic insulating ground state. The point still under strong debate is whether the d spins in Fe3+ are ordered or not. Here, we review experimental and theoretical studies on the antiferromagnetic insulating phase in λ‐(BETS)2FeCl4 and mention our perspective based on our ESR measurements for λ‐(BETS)2FexGa1−xCl4. Our ESR results indicate that the π‐d interaction in the system is very strong and there is no sign of paramagnetic Fe spins in the antiferromagnetic ground state.

Single-component molecular conductors form an important class of materials showing exotic quantum phenomena, owing to the range of behavior they exhibit under physical stimuli. We report the effect of high pressure on the electrical properties and crystal structure of the single-component crystal [Ni(dddt)₂] (where dddt = 5,6-dihydro-1,4-dithiin-2,3-dithiolate). The system is isoelectronic and isostructural with [Pd(dddt)₂], which is the first example of a single-component molecular crystal that exhibits nodal line semimetallic behavior under high pressure. Systematic high pressure four-probe electrical resistivity measurements were performed up to 21.6 GPa, using a Diamond Anvil Cell (DAC), and high pressure single crystal synchrotron X-ray diffraction was performed up to 11.2 GPa. We found that [Ni(dddt)₂] initially exhibits a decrease of resistivity upon increasing pressure but, unlike [Pd(dddt)₂], it shows pressure-independent semiconductivity above 9.5 GPa. This correlates with decreasing changes in the unit cell parameters and intermolecular interactions, most notably the π-π stacking distance within chains of [Ni(dddt)₂] molecules. Using first-principles density functional theory (DFT) calculations, based on the experimentally-determined crystal structures, we confirm that the band gap decreases with increasing pressure. Thus, we have been able to rationalize the electrical behavior of [Ni(dddt)₂] in the pressure-dependent regime, and suggest possible explanations for its pressure-independent behavior at higher pressures.

A single-component molecular crystal [Pd(dddt)₂] has been shown to exhibit almost temperature-independent resistivity under high pressure, leading theoretical studies to propose it as a three-dimensional (3D) Dirac electron system. To obtain more experimental information about the high-pressure electronic states, detailed resistivity measurements were performed, which show temperature-independent behavior at 13 GPa and then an upturn in the low temperature region at higher pressures. High-pressure single-crystal structure analysis was also performed for the first time, revealing the presence of pressure-induced structural disorder, which is possibly related to the changes in resistivity in the higher-pressure region. Calculations based on the disordered structure reveal that the Dirac cone state and semiconducting state coexist, indicating that the electronic state at high pressure is not a simple Dirac electron system as previously believed. Finally, the first measurements of magnetoresistance on [Pd(dddt)₂] under high pressure are reported, revealing unusual behavior that seems to originate from the Dirac electron state.