Emigration of tissue-resident memory T cells (TRMs) was recently introduced in mouse models and may drive systemic inflammation. Skin TRMs of patients undergoing allogeneic hematopoietic stem cell transplantation (HSCT) can coexist beside donor T cells, offering a unique human model system to study T cell migration. By genotyping, mathematical modeling, single-cell transcriptomics, and functional analysis of patient blood and skin T cells, we detected a small consistent population of circulating skin-derived T cells with a TRM phenotype (cTRMs) in the blood and unveil their skin origin and striking resemblance to skin TRMs. Blood from patients with active graft-versus-host disease (GVHD) contains elevated numbers of host cTRMs producing pro-inflammatory Th2/Th17 cytokines and mediating keratinocyte damage. Expression of gut-homing receptors and the occurrence of cTRMs in gastrointestinal GVHD lesions emphasize their potential to reseed and propagate inflammation in distant organs. Collectively, we describe a distinct circulating T cell population mirroring skin inflammation, which could serve as a biomarker or therapeutic target in GVHD.

Band nesting occurs when conduction and valence bands are approximately equispaced over regions in the Brillouin zone. In two-dimensional materials, band nesting results in singularities of the joint density of states and thus in a strongly enhanced optical response at resonant frequencies. We exploit the high sensitivity of such resonances to small changes in the band structure to sensitively probe strain in semiconducting transition metal dichalcogenides (TMDs). We measure and calculate the polarization-resolved optical second harmonic generation (SHG) at the band nesting energies and present the first measurements of the energy-dependent nonlinear photoelastic effect in atomically thin TMDs (MoS₂, MoSe₂, WS₂, and WSe₂) combined with a theoretical analysis of the underlying processes. Experiment and theory are found to be in good qualitative agreement displaying a strong energy dependence of the SHG, which can be exploited to achieve exceptionally strong modulation of the SHG under strain. We attribute this sensitivity to a redistribution of the joint density of states for the optical response in the band nesting region. We predict that this exceptional strain sensitivity is a general property of all 2D materials with band nesting.

We calculate the time evolution of the transient reflection signal in an MoS$_2$ monolayer on a SiO$_2$/Si substrate using first-principles out-of-equilibrium real-time methods. Our simulations provide a simple and intuitive physical picture for the delayed, yet ultrafast, evolution of the signal whose rise time depends on the excess energy of the pump laser: at laser energies above the A- and B-exciton, the pump pulse excites electrons and holes far away from the K valleys in the first Brillouin zone. Electron-phonon and hole-phonon scattering lead to a gradual relaxation of the carriers towards small $\textit{Active Excitonic Regions}$ around K, enhancing the dielectric screening. The accompanying time-dependent band gap renormalization dominates over Pauli blocking and the excitonic binding energy renormalization. This explains the delayed buildup of the transient reflection signal of the probe pulse, in excellent agreement with recent experimental data. Our results show that the observed delay is not a unique signature of an exciton formation process but rather caused by coordinated carrier dynamics and its influence on the screening.