Biochar application has been reported to improve the physical, chemical, and hydrological properties of soil. However, the information about the size fraction composition of the applied biochar as a factor that may have an impact on the properties of soil-biochar mixtures is often underappreciated. Our research shows how sunflower husk biochar (pyrolyzed at 650 °C) can modify the water retention characteristics of arable sandy soil depending on the biochar dose (up to 9.52 wt.%) and particle size (<50 µm, 50–100 µm, 100–250 µm). For comparison, we used soil samples mixed with biochar passed through 2 mm sieve and an unamended reference. The addition of sieved biochar to the soil caused a 30% increase in the available water content (AWC) in comparing to the soil without biochar. However, the most notable improvement (doubling the reference AWC value from 0.078 m³ m⁻³ to 0.157 m³ m⁻³) was observed at the lowest doses of biochar (0.95 and 2.24 wt.%) and for the finest size fractions (below 100 µm). The water retention effects on sandy soil are explained as the interplay between the dose, the size of biochar particles, and the porous properties of biochar fractions.

The current Polish Agricultural Drought Monitoring System (ADMS) adopted Climatic Water Balance (CWB) as the main indicator of crop losses caused by drought conditions. All meteorological data needed for CWB assessment are provided by the ground meteorological stations network. In 2018, the network consisted of 665 stations, among which in only 58 stations full weather parameters were registered. Therefore, only these stations offered a possibility to estimate the exact values of potential evapotranspiration, which is a component of the CWB algorithm. This limitation affects the quality of CWB raster maps, interpolated on the basis of the meteorological stations network for the entire country. However, the interpolation process itself may introduce errors; therefore, the adaptation of satellite data (that are spatially continuous) should be taken into account, even if the lack of data due to cloudiness remains a serious problem. In this paper, we involved the remote sensing data from MODIS instrument and considered the ability to integrate those data with values determined by using ground measurements. The paper presents results of comparisons for the CWB index assessed using ground station data and those obtained from potential evapotranspiration as the product from Moderate Resolution Imaging Spectroradiometer (MODIS) remote sensing instrument. The comparisons of results were performed for specific points (locations of ground stations) and were expressed by differences in means values. Analysis of Pearson’s correlation coefficient (r), Mann–Kendal trend test (Z-index), mean absolute error (MAE) and root mean square error (RMSE) for ten years’ series were evaluated and are presented. In addition, the basic spatial interpretation of results has been proposed. The correlation test revealed the r coefficient in the range from 0.06 to 0.68. The results show good trend agreement in time between two types of CWB with constantly higher values of this index, which is estimated using ground measurement data. In results for 34 (from 43 analyzed) stations the Mann–Kendal test provide the consistent trend, and only nine trends were inconsistent. Analyses revealed that the disagreement between the two considered indices (determined in different ways) increased significantly in the warmer period with a significant break point between R7 and R8 that falls at the end of May for each examined year. The value of MAE varied from 80 mm to 135 mm.

Diluted ferromagnetic semiconductors combining ferromagnetic and semiconducting properties in one material provide numerous new functionalities, attractive for basic studies and potentially useful for novel device applications. The tailoring of the electronic structure in analogy to conventional semiconductors has yet to be explored. Here, we demonstrate the conservation of broken inversion symmetry and band structure tailoring for high-quality molecular-beam-epitaxy-grown (In,Ga,Mn)As films with 3% In plus 2.5% or 5.6% Mn using hard-x-ray photoelectron diffraction (hXPD) and momentum microscopy. Photon energies of 3–5 keV ensure that the results are not corrupted by surface effects, which are known to be strong in semiconductors. The missing inversion center of the GaAs host lattice leads to fingerprint-like hXPD signatures of As and Ga sites. For both concentrations, Mn predominantly occupies Ga substitutional sites. Momentum microscopy reveals a shift of the chemical potential with increasing Mn doping and a highly dispersing band, crossing the Fermi level for high Mn concentration. The Mn doping induces a pronounced modification of the spin-orbit split-off band.

Modulation photoreflectance spectroscopy and Raman spectroscopy have been applied to study the electronic- and band-structure evolution in (Ga,Mn)As epitaxial layers with increasing Mn doping in the range of low Mn content, up to 1.2%. Structural and magnetic properties of the layers were characterized with high-resolution X-ray diffractometry and SQUID magnetometery, respectively. The revealed results of decrease in the band-gap-transition energy with increasing Mn content in very low-doped (Ga,Mn)As layers with n-type conductivity are interpreted as a result of merging the Mn-related impurity band with the host GaAs valence band. On the other hand, an increase in the band-gap-transition energy with increasing Mn content in (Ga,Mn)As layers with higher Mn content and p-type conductivity indicates the Moss-Burstein shift of the absorption edge due to the Fermi level location within the valence band, determined by the free-hole concentration. The experimental results are consistent with the valence-band origin of mobile holes mediating ferromagnetic ordering in the (Ga,Mn)As diluted ferromagnetic semiconductor.

Impact of Bi incorporation into (Ga,Mn)As layers on their electronic- and band-structures as well as their magnetic and structural properties has been studied. Homogenous (Ga,Mn)(Bi,As) layers of high structural perfection have been grown by the low-temperature molecular-beam epitaxy technique. Post-growth annealing treatment of the layers results in an improvement of their structural and magnetic properties and an increase in the hole concentration in the layers. The modulation photoreflectance spectroscopy results are consistent with the valence-band model of hole-mediated ferromagnetism in the layers. This material combines the properties of (Ga,Mn)As and Ga(Bi,As) ternary compounds and offers the possibility of tuning its electrical and magnetic properties by controlling the alloy composition.

The effect of outdiffusion of Mn interstitials from (Ga,Mn)As epitaxial layers, caused by post-growth low-temperature annealing, on their electronic- and band-structure properties has been investigated by modulation photoreflectance (PR) spectroscopy. The annealing-induced changes in structural and magnetic properties of the layers were examined with high-resolution X-ray diffractometry and superconducting quantum interference device magnetometry, respectively. They confirmed an outdiffusion of Mn interstitials from the layers and an enhancement in their hole concentration, which were more efficient for the layer covered with a Sb cap acting as a sink for diffusing Mn interstitials. The PR results demonstrating a decrease in the band-gap-transition energy in the as-grown (Ga,Mn)As layers, with respect to that in the reference GaAs one, are interpreted by assuming a merging of the Mn-related impurity band with the GaAs valence band. Whereas an increase in the band-gap-transition energy caused by the annealing treatment of the (Ga,Mn)As layers is interpreted as a result of annealing-induced enhancement of the free-hole concentration and the Fermi level location within the valence band. The experimental results are consistent with the valence-band origin of itinerant holes mediating ferromagnetic ordering in (Ga,Mn)As, in agreement with the Zener model for ferromagnetic semiconductors.