This study presents a novel hybrid memristor (MR)‐complementary metal–oxide–semiconductor‐based flash analogue‐to‐digital converter (ADC). The speed and efficiency of the ADC are important aspects that can significantly affect the overall system performance. The flash ADC is considered the fastest type of ADCs; however, its performance is affected by the resistor mismatch. The proposed flash ADC is the first to use tunable MR to replace conventional resistor to generate accurate reference voltages. This is achieved by utilising the highly analogue behaviour observed in multi‐state MR devices fabricated and tested by the authors' group. The electrical parameters of the devices have been extracted by device characterisation, then the voltage‐threshold adaptive model (VTEAM) has been used to develop a correlated mathematical and Simulation Program with Integrated Circuit Emphasis (SPICE) device model. The proposed MR‐based flash‐ADC design solves the issue of resistor mismatch that results in encoding errors by the ability to tune the MR resistance value post‐processing. Moreover, being a nanoscale component, the usage of MR significantly improves the area efficiency of the target ADC. Furthermore, the proposed design has improved the ADC transfer function characteristic and has lower differential non‐linearity and integral non‐linearity errors compared with the conventional design.

Recently, Memristor (MR) device has received much attention in many applications, including memory, computing, neuromorphic, sensing, and security. Electrical characterization and testing of MR are among the main challenges facing MR technology. Available MR characterization tools are costly and bulky, limiting the research contributions in this field to big institutions. Furthermore, there is a need for a portable testing platform that provides the means to extract MR parameters, mainly when used in sensing or security applications. This work proposes a novel power-efficient, cost-effective, lightweight, and automated Arduino-based MR characterization platform named MemChar. A detailed circuit and system implementation of MemChar are presented. MemChar functionality results are compared to industry-standard device parameter analyzer tools, i.e., Keithley 4200A, with excellent correlation. MemChar is an easy-to-implement and user-friendly platform that provides a significant milestone toward utilizing MR devices in mobile, IoT, and sensing applications.

The Physical Unclonable Function (PUF) is a security mechanism that takes advantage of the physical variations in a device to create a unique response that can be used as a device signature or secure key. However, many DRAM-based PUFs violate the operating rules of commodity DRAM to exploit a source of entropy in the DRAM read path. This work proposes a fast and reliable DRAM-based PUF that evaluates the variation of adjacent cells and produces the response through the normal read operation. The proposed design is implemented using 65-nm technology, and a detailed statistical SPICE simulation verifies its validity. The statistical analysis shows that the proposed PUF achieves 54.19% uniformity and 49.43% uniqueness, with 98% of the investigated responses achieving a Shannon entropy of 0.95. Additionally, the proposed design generates the response by 45, which is at least 66.7 times faster than existing systems. Furthermore, the proposed design uses the relative behavior of cells, which allows for stable responses against temperature and voltage variations, eliminating the need for error correction codes. The proposed PUF also shows resiliency against machine learning-based modeling attacks, as the prediction accuracy does not exceed 55% over 5K Challenge-Response Pairs (CRPs). The area overhead is negligible as the proposed design uses standard circuits, with the addition of only one 2x1 multiplexer at the inputs of the row buffer.

This work demonstrates a low-power, light-weight, and cost-efficient vacuum pressure sensor and air leak detector based on 2 mm $\times2$ mm Cu/HfO ₂ / $\text{p}^{+}$ -Si memristor device. The operating principle of the proposed sensor relies on monitoring the off-state resistance ( $\text{R}_{off}$ ) of the device, wherein the experimental results show that the $\text{R}_{off}$ value is inversely proportional to the vacuum pressure. The fabricated sensors demonstrated a sensitivity of 493 Torr ⁻¹ and power consumption as low as $\sim 8$ nW, when tested in a wide range of sub-atmospheric pressure ( $4.9\times 10^{-5} - 760$ ) Torr, making them highly suitable for low-power applications. Furthermore, it is shown that the sensor can be integrated with a microcontroller-based circuitry to serve as a standalone sensing system.