Understanding and mastering the structural evolution of water oxidation electrocatalysts lays the foundation to finetune their catalytic activity. Herein, we demonstrate that surface reconstruction of spinel oxides originates from the metal-oxygen covalency polarity in the M_T–O–M_O backbone. A stronger M_O–O covalency relative to M_T–O covalency is found beneficial for a more thorough reconstruction towards oxyhydroxides. The structure-reconstruction relationship allows precise prediction of the reconstruction ability of spinel pre-catalysts, based on which the reconstruction degree towards the in situ generated oxyhydroxides can be controlled. The investigations of oxyhydroxides generated from spinel pre-catalysts with the same reconstruction ability provide guidelines to navigate the cation selection in spinel pre-catalysts design. This work reveals the fundamentals for manipulating the surface reconstruction of spinel pre-catalysts for water oxidation.

The facile silane functionalization of graphene oxide (GO) was achieved yielding vinyltrimethoxysilane-reduced graphene oxide (VTMOS-rGO) nanospheres located in the inter-layer spacing between rGO sheets via an acid–base reaction using aqueous media. The successful grafting of the silane agent with pendant vinyl groups to rGO was confirmed by a combination of Fourier-transform infrared (FTIR), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The structure and speciation of the silane-graphene network (nanosphere) and, the presence of free vinyl groups was verified from solid-state magic angle spinning (MAS) and solution ¹³C and ²⁹Si nuclear magnetic resonance (NMR) measurements. Evidence from Scanning Electron Microscopy (SEM), High-Resolution Transmission Electron Microscopy (HRTEM) and TEM-High-Angle Annular Dark-Field (TEM-HAADF) imaging showed that these silane networks aided the exfoliation of the rGO layers preventing agglomeration, the interlayer spacing increased by 10 Å. The thermal stability (TGA/DTA) of VTMOS-rGO was significantly improved relative to GO, displaying just one degradation process for the silane network some 300 °C higher than either VTMOS or GO alone. The reduction of GO to VTMOS-rGO induced sp² hybridization and enhanced the electrical conductivity of GO by 10⁵ S m⁻¹.