Here we report a quantum dot light emitting diode (QLED), in which a layer of colloidal silicon quantum dots (SiQDs) works as the optically active component, exhibiting a strong electroluminescence (EL) spectrum peaking at 620 nm. We could not see any fluctuation of the EL spectral peak, even in air, when the operation voltage varied in the range from 4 to 5 V because of the possible advantage of the inverted device structure. The pale-orange EL spectrum was as narrow as 95 nm. Interestingly, the EL spectrum was narrower than the corresponding photoluminescence (PL) spectrum. The EL emission was strong enough to be seen by the naked eye. The currently obtained brightness (∼4200 cd/m²), the 0.033% external quantum efficiency (EQE), and a turn-on voltage as low as 2.8 V show a sufficiently high performance when compared to other orange-light-emitting Si-QLEDs in the literature. We also observed a parasitic emission from the neighboring compositional layer (i.e., the zinc oxide layer), and its intensity increased with the driving voltage of the device.

Colloidal carbon dots (CDs) have garnered much attention as metal‐free photoluminescent nanomaterials, yet creation of solid‐state fluorescent (SSF) materials emitting in the deep red (DR) to near‐infrared (NIR) range poses a significant challenge with practical implications. To address this challenge and to engineer photonic functionalities, a micro‐resonator architecture is developed using carbonized polymer microspheres (CPMs), evolved from conventional colloidal nanodots. Gram‐scale production of CPMs utilizes controlled microscopic phase separation facilitated by natural peptide cross‐linking during hydrothermal processing. The resulting microstructure effectively suppresses aggregation‐induced quenching (AIQ), enabling strong solid‐state light emission. Both experimental and theoretical analysis support a role for extended π‐conjugated polycyclic aromatic hydrocarbons (PAHs) trapped within these microstructures, which exhibit a progressive red shift in light absorption/emission toward the NIR range. Moreover, the highly spherical shape of CPMs endows them with innate photonic functionalities in combination with their intrinsic CD‐based attributes. Harnessing their excitation wavelength‐dependent photoluminescent (PL) property, a single CPM exhibits whispering‐gallery modes (WGMs) that are emission‐tunable from the DR to the NIR. This type of newly developed microresonator can serve as, for example, unclonable anti‐counterfeiting labels. This innovative cross‐cutting approach, combining photonics and chemistry, offers robust, bottom‐up, built‐in photonic functionality with diverse NIR applications.

Despite bulk crystals of silicon (Si) being indirect bandgap semiconductors, their quantum dots (QDs) exhibit the superior photoluminescence (PL) properties including high quantum yield (PLQY > 50%) and spectral tunability in a broad wavelength range. Nevertheless, their low optical absorbance character inhibits the bright emission from the SiQDs for phosphor-type light emitting diodes (LEDs). In contrast, a strong electroluminescence is potentially given by serving SiQDs as an emissive layer of current-driven LEDs with (Si-QLEDs) because the charged carriers are supplied from electrodes unlike absorption of light. Herein, we report that the external quantum efficiency (EQE) of Si-QLED was enhanced up to 12.2% by postproduction effect which induced by continuously applied voltage at 5 V for 9 h. The active layer consisted of SiQDs with a diameter of 2.0 nm. Observation of the cross-section of the multilayer QLEDs device revealed that the interparticle distance between adjacent SiQDs in the emissive layer is reduced to 0.95 nm from 1.54 nm by “post-electric-annealing”. The shortened distance was effective in promoting charge injection into the emission layer, leading improvement of the EQE.

Solution-processed, cadmium-free quantum dot (QD) photodiodes are compatible with printable optoelectronics and are regarded as a potential candidate for wavelength-selective optical sensing. However, a slow response time resulting from low carrier mobility and a poor dissociation of charge carriers in the optically active layer has hampered the development of the QD photodiodes with nontoxic device constituents. Herein, we report the first InP-based photodiode with a multilayer device architecture, working in photovoltaic mode in photodiode circuits. The photodiode showed the fastest response speed with rising and falling times of τ_r = 4 ms and τ_f = 9 ms at a voltage bias of 0 V at room temperature in ambient air among the Cd-free photodiodes. The single-digit millisecond photo responses were realized by efficient transportation of the photogenerated carriers in the optically active layer resulting from coherent InP/ZnS core/shell QD structure, fast separation of electron and hole pairs at the interface between QD and Al-doped ZnO layers, and optimized conditions for uniform deposition of each thin film. The results suggested the versatility of coherent core/shell QDs as a photosensitive layer, whose structures allow various semiconductor combinations without lattice mismatch considerations, towards fast response, high on/off ratios, and spectrally tunable optical sensing.

We report on the impact of impurity doping on performance enhancement of silicon quantum dot (SiQD) light-emitting diodes.

A one-pot synthesis of InSb/InP core–shell quantum dots (QDs) was developed, enabling the first observation of electroluminescence from LEDs with these QDs as the active layer.