This review examines recent advancements in electrochemical immunosensors for the detection of organophosphate pesticides, focusing on strategies to enhance sensitivity and selectivity. The widespread use of these pesticides has necessitated the development of rapid, accurate, and field-deployable detection methods. We discuss the fundamental principles of electrochemical immunosensors and explore innovative approaches to improve their performance. These include the utilization of nanomaterials such as metal nanoparticles, carbon nanotubes, and graphene for signal amplification; enzyme-based amplification strategies; and the design of three-dimensional electrode architectures. The integration of these sensors into microfluidic and lab-on-a-chip devices has enabled miniaturization and automation, while screen-printed and disposable electrodes have facilitated on-site testing. We analyze the challenges faced in real sample analysis, including matrix effects and the stability of biological recognition elements. Emerging trends such as the application of artificial intelligence for data interpretation and the development of aptamer-based sensors are highlighted. The review also considers the potential for commercialization and the hurdles that must be overcome for widespread adoption. Future research directions are identified, including the development of multi-analyte detection platforms and the integration of sensors with emerging technologies like the Internet of Things. This comprehensive overview provides insights into the current state of the field and outlines promising avenues for future development in organophosphate pesticide detection.

Two-dimensional (2D) tungsten disulfide (WS₂) has inspired great efforts in optoelectronics, such as in solar cells, light-emitting diodes, and photodetectors. However, chemical vapor deposition (CVD) grown 2D WS₂ domains with the coexistence of a discontinuous single layer and multilayers are still not suitable for the fabrication of photodetectors on a large scale. An emerging field in the integration of organic materials with 2D materials offers the advantages of molecular diversity and flexibility to provide an exciting aspect on high-performance device applications. Herein, we fabricated a photodetector based on a 2D-WS₂/organic semiconductor materials (mixture of the (Poly-(N,N′-bis-4-butylphenyl-N,N′-bisphenyl) benzidine and Phenyl-C61-butyric acid methyl ester (Poly-TPD/PCBM)) heterojunction. The application of Poly-TPD/PCBM organic blend film enhanced light absorption, electrically connected the isolated WS₂ domains, and promoted the separation of electron-hole pairs. The generated exciton could sufficiently diffuse to the interface of the WS₂ and the organic blend layers for efficient charge separation, where Poly-TPD was favorable for hole carrier transport and PCBM for electron transport to their respective electrodes. We show that the photodetector exhibited high responsivity, detectivity, and an on/off ratio of 0.1 A/W, 1.1 × 10¹¹ Jones, and 100, respectively. In addition, the photodetector showed a broad spectral response from 500 nm to 750 nm, with a peak external quantum efficiency (EQE) of 8%. Our work offers a facile solution-coating process combined with a CVD technique to prepare an inorganic/organic heterojunction photodetector with high performance on silicon substrate.

Although cuprous phosphide (Cu₃P) has been widely studied and applied in other fields, its photoluminescence (PL) properties are rarely investigated. Herein, we report that Cu₃P can emit near-infrared light at 750 nm. We show that the annealing and the presence of cuprous oxide can enhance the PL emission. The mechanism of the PL enhancement is the improvement of crystal quality and the formation of a space charge region. Our results provide a reference for improving the PL properties of p-type semiconductors.

Photocurrent of Ag ₂ S particles decreases in alcohol gases or with CuPc coating and increases in CS ₂ . This interesting phenomenon is explained through a model of gas adsorption.

Inorganic semiconductors usually show n-type characterization; the development of p-type inorganic semiconductor material will provide more opportunities for novel devices. In this paper, we investigated the chemical vapor deposition (CVD) of p-type cuprous phosphide (Cu₃P) nanofilm and studied its thermal oxidation behavior. Cu₃P film was characterized by optical microscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), laser Raman spectroscopy (Raman), and fluorescence spectroscopy (PL). We found that the thickness of film ranged from 4 to 10 nm, and the film is unstable at temperatures higher than room temperature in air. We provide a way to prepare inorganic phosphide nanofilms. In addition, the possible thermal oxidation should be taken into consideration for practical application.

Molybdenum disulfide (MoS₂) layers show excellent optical and electrical properties and have many potential applications. However, the growth of high-quality MoS₂ layers is a major bottleneck in the development of MoS₂-based devices. In this paper, we report a chemical vapor transport deposition method to investigate the growth behavior of monolayer/multi-layer MoS₂ using water (H₂O) as the transport agent. It was shown that the introduction of H₂O vapor promoted the growth of MoS₂ by increasing the nucleation density and continuous monolayer growth. Moreover, the growth mechanism is discussed.