Two series of novel polyazomethines (PAMs) P1–P5, Pa–Pe with an M_n of 1522–7879 g mol⁻¹ were prepared via the direct polycondensation from N,N-Bis(4-aminophenyl)-4-N′-carbazolyl-1,4- phenylenediamine, and N,N-Bis (4-aminophenyl)-N′,N′-di-phenyl-1,4-phenylenediamine with various dicarboxaldehyde such as phthaldialdehyde, 1,3-isophthalaldehyde, terephthalaldehyde, 4,4′-diformyltriphenylamine, 3,5-thiophenedialdehyde. All the polymers were amorphous with good solubility in many organic solvents, such as CHCl₃, tetrahydrofuran (THF), N-methyl-2-pyrrolidinone (NMP) and N,N-dimethylacetamide (DMAc), and could be solution-cast into polymer films. All polymers displayed outstanding thermal stabilities, i.e. 20% wt loss in excess of 470 °C under nitrogen. A hybrid density functional theory (DFT) method was used to calculate the optimized geometry and electronic structure of PAMs. The variation of the backbone ring significantly affected the dihedral angles and resulted in the variation of electronic properties. The HOMO and LUMO energy levels of these polymers calculated by electrochemistry and absorption spectra were in the range 4.687–5.189 and 2.366–2.989 eV below the vacuum level, respectively. Our study demonstrated the backbone ring can tune the electronic properties of conjugated PAMs effectively. All obtained PAMs revealed stability of electrochromic characteristics, changing color from original yellowish to red or violet or blue. And multiple reversible colours states were observed upon chemical doping. The properties prove that the polyazomethines are multipurpose materials which will be used in hole-transporting, electrochromic and chemical sensor applications in the near future.

Nonvolatile ternary memory devices were fabricated using the composite of polystyrene (PS) and graphene oxide(GO) as active layers, which have an reliable intermediate state. The current-voltage (I-V) curves of the indium tin oxide (ITO)/PS+GO/Al device under the external applied voltages exhibited current tri-stability with three conductivity states, which clearly revealed ternary memory performance. Under the stimulus of the external voltage, a stable intermediate conductivity state was observed. In the write-read-erase-read test, the ITO/PS+GO/Al device exhibited rewritable, nonvolatile, ternary memory properties. The resistance as functions of the time indicated that three conductivity states held for 2 × 10⁵ s, suggesting that the good stability of the ITO/PS+GO/Al devices. HRTEM and XPS observation indicated that the Al top electrode reacted with oxygen within in GO.

The electrical conductance switching behavior and nonvolatile memory effects in poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) PEDOT:PSS and single-wall carbon nanotubes (SWCNTs) composite thin films have been investigated. The effect of doping level on electrical conductance switching behavior of an indium tin oxide/PEDOT:PSS + SWCNTs/aluminum (ITO/PEDOT:PSS + SWCNTs/Al) sandwich structure has been reported. The ITO/(PEDOT:PSS + SWCNTs)/Al devices show current bistability. Moreover, the ON/OFF state current ratio is in an extent of 10²–10⁴. The OFF state current increased with the decreasing SWCNTs content in the composite film, and the ON/OFF state current ratio of the device increases with the increase in SWCNTs content of the composite film. Thus, by varying the doping level of SWCNTs in PEDOT:PSS composite thin films, the electrical conductance switching behavior of ITO/PEDOT:PSS + SWCNTs/Al can be modulated in a controlled manner.

The resistive random access memory (RRAM) devices based on polyvinylpyrrolidone (PVP) and PVP:PVP:zinc oxide nanoparticle (ZnO NP) active layers have bistable electrical switching behavior. Herein, via a series of storage performance tests, it was proved that the ITO/PVP:ZnO/Al device has a higher ON/OFF current ratio and better memory performance than the ITO/PVP/Al device. Moreover, at 13 wt% concentration of ZnO NPs, optimal storage performance was obtained, the switch state current ratio significantly increased, and the threshold voltage obviously decreased. The conduction mechanism of the devices was further discussed. The device having inorganic nanoparticles embedded in the polymer has excellent storage performance, which has potential application value in data storage.