In this work, we propose poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) material to form a hybrid heterojunction with amorphous silicon-based materials for high charge carrier collection at the frontal interface of solar cells. The nanostructural characteristics of PEDOT:PSS layers were modified using post-treatment techniques via isopropyl alcohol (IPA). Atomic force microscopy (AFM), Fourier-transform infrared (FTIR), and Raman spectroscopy demonstrated conformational changes and nanostructural reorganization in the surface of the polymer in order to tailor hybrid interface to be used in the heterojunctions of inorganic solar cells. To prove this concept, hybrid polymer/amorphous silicon solar cells were fabricated. The hybrid PEDOT:PSS/buffer/a-Si:H heterojunction demonstrated high transmittance, reduction of electron diffusion, and enhancement of the internal electric field. Although the structure was a planar superstrate-type configuration and the PEDOT:PSS layer was exposed to glow discharge, the hybrid solar cell reached high efficiency compared to that in similar hybrid solar cells with substrate-type configuration and that in textured well-optimized amorphous silicon solar cells fabricated at low temperature. Thus, we demonstrate that PEDOT:PSS is fully tailored and compatible material with plasma processes and can be a substitute for inorganic p-type layers in inorganic solar cells and related devices with improvement of performance and simplification of fabrication process.

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Non-steady-state photoelectromotive force effect in the presence of periodical and linear phase shift was investigated both theoretically and experimentally. It was shown that superposition of oscillating and linear movements of the interference pattern leads to the appearance of the sharp peak in the frequency dependence of the photoelectromotive force output current when the frequency of periodical modulation matches the frequency of the linear phase shift. We demonstrated experimentally that this effect can be used for determination of a Doppler frequency shift between signal and reference beam.

Thin-film hybrid organic-inorganic photovoltaic structures based on hydrogenated silicon (Si:H), poly(3,4ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) polymer Al-doped ZnO (AZO) films deposited on different types of flexible substrates have been fabricated and investigated. The compatibility of the polymer and inorganic materials regimes and deposition techniques used for device fabrication has been demonstrated on flexible substrates. Morphological characteristics of transparent Al-doped ZnO (AZO) films deposited on substrates have been measured by atomic force microscopy. Electronic characteristics of the fabricated photovoltaic structures have been measured and analyzed for different thicknesses of the transparent electrodes and different substrate types. Photovoltaic hybrid structure on polyethylene naphthalate (PEN) substrate showed the best characteristics: short circuit current density J_sc = 9.79 mA/cm², open circuit voltage U_oc = 565 mV, and PCE η = 1.3%. To analyze the mechanisms governing the device performance, short circuit current density spectral dependence of the devices fabricated on different types of flexible substrates has been measured. As demonstrated by our analysis, the structures on PEN substrates, besides better substrate transmittance, also show better junction properties.

In this work, we present the study of the atomic composition in amorphous Si_XGe_Y:H_Z films deposited by radio frequency (RF—13.56 MHz) plasma discharge at low deposition temperature. A study and control of Si and Ge atoms termination using H-dilution in SiGe:H alloys deposited by RF plasma discharge was conducted and we made a comparison with low-frequency plasma discharge studies. Solid contents of the main elements and contaminants were determined by SIMS technique. It was found that for low dilution rates from R_H = 9 to 30, the germanium content in the solid phase strongly depends on the hydrogen dilution and varies from Y = 0.49 to 0.68. On the other hand, with a higher presence of hydrogen in the mixture, the germanium content does not change and remains close to the value of Y = 0.69. The coefficient of Ge preferential incorporation depended on R_H and varied from P_Ge = 0.8 to 4.3. Also, the termination of Si and Ge atoms with hydrogen was studied using FTIR spectroscopy. Preferential termination of Si atoms was observed in the films deposited with low R_H < 20, while preferential termination of Ge atoms was found in the films deposited with high R_H > 40. In the range of 20 < R_H < 40, hydrogen created chemical bonds with both Si and Ge atoms without preference.