Due to the motion artifacts and mechanical mismatches between the conventional rigid sensor and soft skin, flexible sensors have received extensive attention in recent years. In this paper, a AgNW-based strain sensor on thermoplastic polyurethane (TPU) substrates was fabricated via a transfer-printing technique. The effects of AgNW content on the mechanical, electrical, transparency, and strain-sensing properties of the composite films were investigated. A highly transparent AgNW/TPU composite film with a sheet resistance of 20.8 Ω sq⁻¹ possessed a higher GF above 1000 with a narrower tensile range of 50–60%. The composite strain sensor was used to detect large human motions such as finger, elbow and knee bending, as well as subtle muscle contractions. Additionally, the fast response of this strain sensor to an external stimulus was demonstrated. This work provides an easy operating and low-cost method to fabricate highly stretchable, electrically conductive and transparent films, which could be applied to wearable electronics and health monitoring.

Micro-electromechanical systems (MEMS) magnetic sensing at high temperatures over 573 K has not been achieved due to the difficulty in designing the rational interface with strong coupling. Here, a magnetic sensor based on FeGa/single-crystal diamond (SCD) MEMS resonator is realized to circumvent the challenges in magnetic sensing. The present magnetic sensor exhibits a stable high-sensitivity of 7.3 Hz/mT at 573 K and an experimental noise level of ~4nT/√Hz. The performance exceeds those of reported high-temperature magnetic sensors. This work offers a strategy for developing magnetic sensors with merits super to the existing ones. GRAPHICAL ABSTRACT IMPACT STATEMENT The first high-temperature MEMS magnetic sensor over 573 K super to the present ones is realized by coupling a magneto-strictive FeGa film with a diamond MEMS resonator.

Self-powered solar-blind UV detectors are playing an increasingly critical role in the sustainable development of photodetectors with low energy consumption. In this work, the design of electrode structures, including an asymmetric-size structure and an asymmetric-material structure, was proposed to achieve self-powered photodetection function for the solar-blind UV a-Ga₂O₃ based photodetectors with metal–semiconductor–metal (MSM) structures. The results indicate that the Au/Ti/Ga₂O₃/Ti/Au photodetector with an asymmetric-electrode-size shows photodetection performances of responsivity (R), external quantum efficiency (EQE), and detectivity (D*) of 0.149 mA W⁻¹, 0.07%, and 3.1 × 10⁹ cm Hz^1/2 W⁻¹@0 V, respectively. The asymmetric-electrode-material photodetectors with Au/Ti/Ga₂O₃/GZO and Au/Ti/Ga₂O₃/Au structures possess photodetection performances of R, EQE, and D* of 0.591 mA W⁻¹, 0.29%, and 2.9 × 10⁹ cm Hz^1/2 W⁻¹ and 0.148 mA W⁻¹, 0.07%, and 7.8 × 10⁸ cm Hz^1/2 W⁻¹@0 V, respectively. The electrodes with the asymmetric-size structure and the asymmetric-material structure result in different Schottky barrier heights in the interfaces of the electrodes and films, which are favorable for realizing self-powered performance. The self-powered solar-blind UV a-Ga₂O₃ based photodetectors have a fast photo-response speed, high stability and high repeatability. These findings provide a promising and facile route to fabricate a-Ga₂O₃ self-powered solar-blind UV photodetectors with high photodetection.