Johannes De Boor

Dr. Johannes De Boor

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Research Focus & Metrics

Academic Career Length

14Years (2013-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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1 June 2013 in Review of Scientific Instruments
Verified
Journal Article
Open access
JBJohannes De Boor
Johannes De Boor
EME. Müller
E. Müller
The Seebeck coefficient is one of the key quantities of thermoelectric materials and routinely measured in various laboratories. There are, however, several ways to calculate the Seebeck coefficient from the raw measurement data. We compare these different ways to extract the Seebeck coefficient, evaluate the accuracy of the results, and show methods to increase this accuracy. We furthermore point out experimental and data analysis parameters that can be used to evaluate the trustworthiness of the obtained result. The shown analysis can be used to find and minimize errors in the Seebeck coefficient measurement and therefore increase the reliability of the measured material properties.

30 January 2013 in Journal of Electronic Materials
Verified
Journal Article
Closed access
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JBJohannes De Boor
Johannes De Boor
CSC. Stiewe
C. Stiewe
PZP. Ziolkowski
P. Ziolkowski
TDT. Dasgupta
T. Dasgupta
GKG. Karpinski
G. Karpinski
EME. Mueller
E. Mueller

28 November 2018 in Journal of Materials Chemistry A
Verified
Journal Article
Closed access
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HKHasbuna Kamila
Hasbuna Kamila
PSPrashant Sahu
Prashant Sahu
ASAryan Sankhla
Aryan Sankhla
MYMohammad Yasseri
Mohammad Yasseri
HPHoang-Ngan Pham
Hoang-Ngan Pham
JBJohannes De Boor
Johannes De Boor
Figure of merit zT mapping of p-Mg2Si1−xSnx with respect to carrier concentration.

31 January 2018 in ACS Applied Energy Materials
Verified
Journal Article
Closed access
ASAryan Sankhla
Aryan Sankhla
APAkash Patil
Akash Patil
HKHasbuna Kamila
Hasbuna Kamila
MYMohammad Yasseri
Mohammad Yasseri
NFNader Farahi
Nader Farahi
JBJohannes De Boor
Johannes De Boor

1 November 2016 in Acta Materialia
Verified
Journal Article
Closed access
JBJohannes De Boor
Johannes De Boor
USU. Saparamadu
U. Saparamadu
JMJ. Mao
J. Mao
KDK. Dahal
K. Dahal
EME. Müller
E. Müller
ZRZhifeng Ren
Zhifeng Ren

18 July 2019 in Journal of Materials Chemistry C
Verified
Journal Article
Open access
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DSDaniel Souchay
Daniel Souchay
MNMarkus Nentwig
Markus Nentwig
DGDaniel Günther
Daniel Günther
SKSimon Keilholz
Simon Keilholz
JBJohannes De Boor
Johannes De Boor
Oliver OecklerOliver Oeckler
Oliver Oeckler
The crystal structures of new layered manganese bismuth tellurides with the compositions Mn0.85(3)Bi4.10(2)Te7 and Mn0.73(4)Bi6.18(2)Te10 were determined by single-crystal X-ray diffraction, including the use of microfocused synchrotron radiation. These analyses reveal that the layered structures deviate from the idealized stoichiometry of the 12P-GeBi4Te7 (space group Pm1) and 51R-GeBi6Te10 (space group Rm) structure types they adopt. Modified compositions Mn1−xBi4+2x/3Te7 (x = 0.15–0.2) and Mn1−xBi6+2x/3Te10 (x = 0.19–0.26) assume cation vacancies and lead to homogenous bulk samples as confirmed by Rietveld refinements. Electron diffraction patterns exhibit no diffuse streaks that would indicate stacking disorder. The alternating quintuple-layer [M2Te3] and septuple-layer [M3Te4] slabs (M = mixed occupied by Bi and Mn) with 1 : 1 sequence (12P stacking) in Mn0.85Bi4.10Te7 and 2 : 1 sequence (51R stacking) in Mn0.81Bi6.13Te10 were also observed in HRTEM images. Temperature-dependent powder diffraction and differential scanning calorimetry show that the compounds are high-temperature phases, which are metastable at ambient temperature. Magnetization measurements are in accordance with a MnII oxidation state and point at predominantly ferromagnetic coupling in both compounds. The thermoelectric figures of merit of n-type conducting Mn0.85Bi4.10Te7 and Mn0.81Bi6.13Te10 reach zT = 0.25 at 375 °C and zT = 0.28 at 325 °C, respectively. Although the compounds are metastable, compact ingots exhibit still up to 80% of the main phases after thermoelectric measurements up to 400 °C.