Hugo Dil

Dr. Hugo Dil

orcid

Research Focus & Metrics

Academic Career Length

25Years (2002-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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20 July 2009 in Nature
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Journal Article
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DHD. Hsieh
D. Hsieh
YXY. Xia
Y. Xia
DQD. Qian
D. Qian
LWL. Wray
L. Wray
HDHugo Dil
Hugo Dil
MHM. Z. Hasan
M. Z. Hasan

13 February 2009 in Science
Verified
Journal Article
Closed access
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DHD. Hsieh
D. Hsieh
YXY. Xia
Y. Xia
LWL. Wray
L. Wray
DQD. Qian
D. Qian
APA. Pal
A. Pal
MHM. Z. Hasan
M. Z. Hasan
A topologically ordered material is characterized by a rare quantum organization of electrons that evades the conventional spontaneously broken symmetry–based classification of condensed matter. Exotic spin-transport phenomena, such as the dissipationless quantum spin Hall effect, have been speculated to originate from a topological order whose identification requires a spin-sensitive measurement, which does not exist to this date in any system. Using Mott polarimetry, we probed the spin degrees of freedom and demonstrated that topological quantum numbers are completely determined from spin texture–imaging measurements. Applying this method to Sb and Bi 1–x Sb x , we identified the origin of its topological order and unusual chiral properties. These results taken together constitute the first observation of surface electrons collectively carrying a topological quantum Berry's phase and definite spin chirality, which are the key electronic properties component for realizing topological quantum computing bits with intrinsic spin Hall–like topological phenomena.

14 February 2024 in Nature
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Journal Article
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JKJuraj Krempasky
Juraj Krempasky
LŠL. Šmejkal
L. Šmejkal
SDS. W. D’souza
S. W. D’souza
MHM. Hajlaoui
M. Hajlaoui
GSGunther Springholz
Gunther Springholz
TJT. Jungwirth
T. Jungwirth
Lifted Kramers spin degeneracy (LKSD) has been among the central topics of condensed-matter physics since the dawn of the band theory of solids1,2. It underpins established practical applications as well as current frontier research, ranging from magnetic-memory technology3–7 to topological quantum matter8–14. Traditionally, LKSD has been considered to originate from two possible internal symmetry-breaking mechanisms. The first refers to time-reversal symmetry breaking by magnetization of ferromagnets and tends to be strong because of the non-relativistic exchange origin15. The second applies to crystals with broken inversion symmetry and tends to be comparatively weaker, as it originates from the relativistic spin–orbit coupling (SOC)16–19. A recent theory work based on spin-symmetry classification has identified an unconventional magnetic phase, dubbed altermagnetic20,21, that allows for LKSD without net magnetization and inversion-symmetry breaking. Here we provide the confirmation using photoemission spectroscopy and ab initio calculations. We identify two distinct unconventional mechanisms of LKSD generated by the altermagnetic phase of centrosymmetric MnTe with vanishing net magnetization20–23. Our observation of the altermagnetic LKSD can have broad consequences in magnetism. It motivates exploration and exploitation of the unconventional nature of this magnetic phase in an extended family of materials, ranging from insulators and semiconductors to metals and superconductors20,21, that have been either identified recently or perceived for many decades as conventional antiferromagnets21,24,25.

28 September 2009 in Physical Review Letters
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Journal Article
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DHD. Hsieh
D. Hsieh
YXY. Xia
Y. Xia
DQD. Qian
D. Qian
LWL. Wray
L. Wray
FMF. Meier
F. Meier
MHM. Z. Hasan
M. Z. Hasan
We show that the strongly spin-orbit coupled materials Bi2Te3 and Sb2Te3 and their derivatives belong to the Z2 topological-insulator class. Using a combination of first-principles theoretical calculations and photoemission spectroscopy, we directly show that Bi2Te3 is a large spin-orbit-induced indirect bulk band gap (δ∼150  meV) semiconductor whose surface is characterized by a single topological spin-Dirac cone. The electronic structure of self-doped Sb2Te3 exhibits similar Z2 topological properties. We demonstrate that the dynamics of spin-Dirac fermions can be controlled through systematic Mn doping, making these materials classes potentially suitable for topological device applications.

1 January 2012 in Nature Communications
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SXSu-Yang Xu
Su-Yang Xu
CLChang Liu
Chang Liu
NAN. Alidoust
N. Alidoust
MNM. Neupane
M. Neupane
DQD. Qian
D. Qian
MHM.Z. Hasan
M.Z. Hasan
A topological insulator protected by time-reversal symmetry is realized via spin–orbit interaction-driven band inversion. The topological phase in the Bi1−xSbx system is due to an odd number of band inversions. A related spin–orbit system, the Pb1−xSnxTe, has long been known to contain an even number of inversions based on band theory. Here we experimentally investigate the possibility of a mirror symmetry-protected topological crystalline insulator phase in the Pb1−xSnxTe class of materials that has been theoretically predicted to exist in its end compound SnTe. Our experimental results show that at a finite Pb composition above the topological inversion phase transition, the surface exhibits even number of spin-polarized Dirac cone states revealing mirror-protected topological order distinct from that observed in Bi1−xSbx. Our observation of the spin-polarized Dirac surface states in the inverted Pb1−xSnxTe and their absence in the non-inverted compounds related via a topological phase transition provide the experimental groundwork for opening the research on novel topological order in quantum devices.

25 August 2011 in Physical Review Letters
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Journal Article
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PKP. D. C. King
P. D. C. King
RHR. C. Hatch
R. C. Hatch
MBMarco Bianchi
Marco Bianchi
ROR. Ovsyannikov
R. Ovsyannikov
CLC. Lupulescu
C. Lupulescu
PHPh. Hofmann
Ph. Hofmann
We report a Rashba spin splitting of a two-dimensional electron gas in the topological insulator Bi2Se3 from angle-resolved photoemission spectroscopy. We further demonstrate its electrostatic control, and show that spin splittings can be achieved which are at least an order-of-magnitude larger than in other semiconductors. Together these results show promise for the miniaturization of spintronic devices to the nanoscale and their operation at room temperature.