In a textured Mg thin film, two types of 〈0001〉 tilt grain boundaries are identified by electron microscopy and atomistic simulation. Coincidence site lattice and dislocation models are applied to study boundaries in hexagonal close-packed crystals.

Impurities can be incorporated during thin film deposition, but also can originate from atmosphere exposure. As impurities can strongly affect the composition—structure—property relations in magnetron sputter deposited thin films, it is important to distinguish between both incorporation channels. Therefore, the impurity incorporation by atmosphere exposure into sputtered Mg, Al, and Ca thin films is systematically studied by a variation of the deposition temperatures and atmosphere exposure times. Deposition temperature variation results in morphological modifications explained by considering surface and bulk diffusion as well as grain boundary motion and evaporation. The film morphologies exhibiting the lowest oxygen concentrations, as measured by energy dispersive X-ray spectroscopy, are obtained at a homologous temperature of 0.4 for both Mg and Al thin films. For Ca, preventing atmosphere exposure is essential to hinder impurity incorporation: By comparing the impurity concentration in Al-capped and uncapped thin films, it is demonstrated that Ca thin films are locally protected by Al-capping, while Mg (and Al) form native passivation layers. Furthermore, it can be learned that the capping (or self-passivation) efficiency in terms of hindering further oxidation of the films in atmosphere is strongly dependent on the underlying morphology, which in turn is defined by the growth temperature.

Thermal conductivity of NbO is studied experimentally and theoretically. Sputtered NbO samples, slightly overstoichiometric in oxygen, are x-ray amorphous with a combined NbO and NbO ₂ short-range order, which is consistent with the quantum mechanical data. Upon annealing, NbO ₂ crystallites form in the amorphous matrix due to an energetic preference of 44 meV atom ⁻¹ over NbO counterparts. The measured thermal conductivity at room temperature using time-domain thermoreflectance is 6.9 W m ⁻¹ K ⁻¹ , followed by a continuous increase due to electronic contributions, and it yields a total increase of 40 W m ⁻¹ K ⁻¹ at 650 K partly due to crystallisation. Phonon–phonon scattering can be induced by introducing Ni _0.75 Ta _0.25 O layers in NbO. These multilayers exhibit a thermal conductivity of 5.4 W m ⁻¹ K ⁻¹ at room temperature and a monotonic drop upon increasing temperature. It is thus feasible to modulate the high-temperature thermal conductivity of amorphous NbO by an order of magnitude. Hence, amorphous NbO may be of interest for thermoelectric devices, sensors and thermal insulation applications.

To study the anomalous thermoelastic behavior of bcc V, Nb, Ta as well as fcc Pd and Pt a density functional theory (DFT) based model is used, which allows for the calculation of the elastic constant and as a function of temperature. Available experimental trends are correctly reproduced indicating that the electronic structure mechanisms enabling anomalous behavior are captured by the model. A DFT based correlative investigation between V, Nb, Ta, Pd and Pt with anomalous thermoelastic properties and Mo and Cu with ordinary behavior reveals a high density of states (DOS) at the Fermi level to be a necessary but not sufficient condition for an anomalous thermoelastic behavior. In addition, anomalous metals in contrast to ordinary metals reallocate electronic states in the vicinity of the Fermi level upon lattice distortion, causing an increase in bond strength as identified by crystal orbital Hamilton population (COHP) analysis. Hence, we have identified the combination of high DOS and electronic reallocation upon lattice distortion to be the physical origin for anomalous thermoelastic behavior in metals. The absence of an anomaly for -type distortion in V, Nb, Ta, Pd and Pt is suggested to be due to the less pronounced reallocation of states compared to -type distortion.

The synthesis–composition–structure relationship in the Mg–Ca–Al system is studied using combinatorial magnetron sputtering. With increasing deposition temperature, a drastic decrease in Mg concentration is obtained. This behavior can be understood based on density functional theory calculations yielding a desorption energy of 1.9 eV/atom for Mg from a hexagonal Mg nanocluster which is far below the desorption energy of Mg from a Mg₂Ca nanocluster (3.4 eV/atom) implying desorption of excess Mg during thin film growth at elevated temperatures. Correlative structural and chemical analysis of binary Mg–Ca thin films suggests the formation of hexagonal Mg₂Ca (C14 Laves phase) in a wide Mg/Ca range from 1.7 to 2.2, expanding the to date reported stoichiometry range. Pronounced thermally-induced desorption of Mg is utilized to synthesize stoichiometric (Mg_1−x,Al_x)₂Ca thin films by additional co-sputtering of elemental Al, exhibiting a higher desorption energy (6.7 eV/atom) compared to Mg (3.4 eV/atom) from Mg₂Ca, which governs its preferred incorporation during synthesis. X-ray diffraction investigations along the chemical gradient suggest the formation of intermetallic C14 (Mg_1–x,Al_x)₂Ca with a critical aluminum concentration of up to 23 at.%. The introduced synthesis strategy, based on the thermally-induced desorption of weakly bonded species, and the preferential incorporation of strongly bonded species, may also be useful for solubility studies of other phases within this ternary system as well as for other intermetallics with weakly bonded alloying constituents.

The temperature-dependent composition and phase formation during the physical vapor deposition (PVD) of Mg-Ca thin films is modeled using a CALPHAD-based approach. Considering the Mg and Ca sublimation fluxes calculated based on the vapor pressure obtained by employing thermochemical equilibrium calculations, the experimentally observed synthesis-temperature trends in the thin-film composition and phase formation were reproduced. The model is a significant step towards understanding how synthesis parameters control composition and, therefore, phase formation in the PVD of metals with high vapor pressures.