Magnetization is produced in samples of ZnO by implanting krypton ions. Krypton is chemically inert; hence, the magnetization is the consequence of the radiation damage that occurred due to the implantation process. We have found magnetization as large as 185 emu cm⁻³ at room temperature which corresponds to a moment of ∼40 Bohr magnetons per implanted krypton ion. The results are compared for implantation into different ZnO samples, O- and Zn-polar thin films and thin ZnO crystal wafers. The structure of the films has been investigated using RHEED, AFM, XRD and EXAFS. The O-polar film grew in a layer-by-layer mode and after implantation, its lattice spacing increased and the grain size decreased which indicated that the Kr atoms had been incorporated into the lattice. In contrast the Zn-polar film grew in a Stranski–Krastanov mode and its lattice spacing and grain size were almost unchanged by the implantation indicating that the Kr atoms were in the grain boundaries. Raman scattering is used to characterize the radiation damage and to identify scattering from amorphous regions in the grain boundaries and the scattering from point defects. The largest magnetization is found in the O-polar ZnO films where there is a marked grain fragmentation, leading to an increase in the volume of the sample occupied by grain boundaries. The increase in the number of point defects, which was identified by Raman scattering for films of both polarity, was less effective at producing a magnetic signal than the grain boundaries.

In this study, zinc-oxide (ZnO) nanoparticles (NPs) doped with cobalt (Co) were synthesized using a simple coprecipitation technique. The concentration of Co was varied to investigate its effect on the structural, morphological, optical, and dielectric properties of the NPs. X-ray diffraction (XRD) analysis confirmed the hexagonal wurtzite structure of both undoped and Co-doped ZnO-NPs. Scanning electron microscopy (SEM) was used to examine the morphology of the synthesized NPs, while energy-dispersive X-ray spectroscopy (EDX) was used to verify their purity. The band gap of the NPs was evaluated using UV-visible spectroscopy, which revealed a decrease in the energy gap as the concentration of Co2+ increased in the ZnO matrix. The dielectric constants and AC conductivity of the NPs were measured using an LCR meter. The dielectric constant of the Co-doped ZnO-NPs continuously increased from 4.0 × 10⁻⁹to 2.25 × 10⁻⁸, while the dielectric loss decreased from 4.0 × 10⁻⁸to 1.7 × 10⁻⁷as the Co content increased from 0.01 to 0.07%. The a.c. conductivity also increased with increasing applied frequency. The findings suggest that the synthesized Co-doped ZnO-NPs possess enhanced dielectric properties and reduced energy gap, making them promising candidates for low-frequency devices such as UV photodetectors, optoelectronics, and spintronics applications. The use of a cost-effective and scalable synthesis method, coupled with detailed material characterization, makes this work significant in the field of nanomaterials and device engineering.

In this study, we used sol-gel to synthesize undoped and V-ZnO nanoparticles with different vanadium concentrations (1, 3, and 5 at.%) under supercritical dry conditions of ethanol. XRD spectra showed that the obtained powders are well crystallized in the hexagonal wurtzite structure of ZnO nanoparticles. The average crystallite size, estimated by the Debye-Scherer formula, was found to be equal to 31 nm for the pure sample, and it was decreased to 27 nm for the 3at.% vanadium-doped one. SEM and TEM photographs indicated the spherical and elongated shapes of the nanoparticles. The stretching bands located at 419 cm⁻¹ confirmed ZnO material formation. The efficacy of the produced ZnO NPs against Gram⁺, Gram⁻ bacteria, and fungi was tested. Vanadium-doped ZnO, with low concentrations (10 µg/mL), exhibited a large influence on bacterial and fungi growth inhibition. For example, the inhibition zones IZ of S. aureus and E. coli bacteria reached 16 and 15 mm, respectively, for ZnO:V_1%, while the IZ of these two bacteria were 14 and 12 mm for the undoped ZnO. The use of V-dopant enhanced the production of the reactive oxygen species ROS by the photogeneration of electron-hole pairs due to light absorption by ZnO in the visible region.