Imran Ali Qureshi

Imran Ali Qureshi


Research Focus & Metrics

Academic Career Length

9Years (2018-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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1 October 2018 in Mehran University Research Journal of Engineering and Technology
Verified
Journal Article
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MSMaria Saher
Maria Saher
AAAsjad Amin
Asjad Amin
IQImran Ali Qureshi
Imran Ali Qureshi
Muhammad Ali QureshiMuhammad Ali Qureshi
Muhammad Ali Qureshi
MJMohammad Moazzam Jawaid
Mohammad Moazzam Jawaid
During the last decade, the CR (Cognitive Radio) came into view as a major wireless technology to resolve the issue of spectrum secrecy and efficient spectrum utilization. However, due to unlicensed (secondary) users, there are various security threats to the CRN (Cognitive Radio Networks). Some malicious users may access the CRN and mislead the secondary users to vacate the occupied channel, which may stop the communication. In this work, we propose a new cryptographic-based algorithm, CRAES (Cognitive Radio-Advanced Encryption Standard), inspired by the traditional AES to secure the CRN. The data of the primary and secondary users is encrypted at the transmitter and decrypted at the receiver. Unlike the conventional AES, we introduce the data-dependent key-generation and shift-rows process. We also reduce the rounds of AES from 10-6 to improve the computational efficiency without compromising the overall security. The experimental results demonstrate the effectiveness of the proposed CR-AES in terms of better security, reliability, and computational efficiency.

25 March 2020 in Coatings
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Journal Article
Open access
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FMFAISAL AHMED MEMON
FAISAL AHMED MEMON
IQImran Ali Qureshi
Imran Ali Qureshi
AMAbdul Latif Memon
Abdul Latif Memon
ZSZafi Sherhan Syed
Zafi Sherhan Syed
NPNasrullah Pirzada
Nasrullah Pirzada
ESErum Saba
Erum Saba
In this paper, integration of silicon oxycarbide (SiOC) and silicon nitride (Si3N4) platforms was demonstrated to realize ultra-efficient thermal tuning of photonic integrated circuits. Si3N4 being a fascinating photonic material with moderate refractive index (n ≈ 2) and ultra-low loss, lacks thermo-optic coefficient that makes thermal phase actuators long and dissipate high powers. Integration of SiOC coating with a comparable refractive index (n = 2.2) boosts the effective thermo-optic efficiency of Si3N4 photonic circuits by almost an order of magnitude with no additional loss. An SiOC layer was deposited by the reactive RF magnetron sputtering technique from the SiC target at room temperature. The structural, chemical and optical characterizations of the sputter deposited SiOC layer were performed with SEM, AFM, EDS and spectroscopic ellipsometry. The results of SiOC-coated Si3N4 and pristine Si3N4 photonic devices were discussed and compared. SiOC was demonstrated as an enabling platform for low-loss and power-efficient thermal phase actuators in conventional photonic technologies with application in reconfigurable photonic systems.