Metal-graphene contact is a key interface in graphene-based device applications, and it is known that two types of interfaces are formed between metal and graphene. In this paper, we apply first-principles calculations to twelve metal-graphene interfaces and investigate the detailed interface atomic and electronic structures of physisorption and chemisorption interfaces. For physisorption interfaces (Ag, Al, Cu, Cd, Ir, Pt, and Au), Fermi level pinning and Pauli-exclusion-induced energy-level shifts are shown to be two primary factors determining graphene’s doping types and densities. For chemisorption interfaces (Ni, Co, Ru, Pd, and Ti), the combination of Pauli-exclusion-induced energy-level shifts and hybridized states’ repulsive interactions lead to a band gap opening with metallic gap states. For practical applications, we show that external electric field can be used to modulate graphene’s energy-levels and the corresponding control of doping or energy range of hybridization.

Materials that are simultaneously ferromagnetic and ferroelectric – multiferroics – promise the control of disparate ferroic orders, leading to technological advances in microwave magnetoelectric applications and next generation of spintronics. Single-phase multiferroics are challenged by the opposite d-orbital occupations imposed by the two ferroics, and heterogeneous nanocomposite multiferroics demand ingredients’ structural compatibility with the resultant multiferroicity exclusively at inter-materials boundaries. Here we propose the two-dimensional heterostructure multiferroics by stacking up atomic layers of ferromagnetic Cr₂Ge₂Te₆ and ferroelectric In₂Se₃, thereby leading to all-atomic multiferroicity. Through first-principles density functional theory calculations, we find as In₂Se₃ reverses its polarization, the magnetism of Cr₂Ge₂Te₆ is switched, and correspondingly In₂Se₃ becomes a switchable magnetic semiconductor due to proximity effect. This unprecedented multiferroic duality (i.e., switchable ferromagnet and switchable magnetic semiconductor) enables both layers for logic applications. Van der Waals heterostructure multiferroics open the door for exploring the low-dimensional magnetoelectric physics and spintronic applications based on artificial superlattices.

We report the observation of highly anisotropic Dirac fermions in a Bi square net of SrMnBi2, based on a first-principles calculation, angle-resolved photoemission spectroscopy, and quantum oscillations for high-quality single crystals. We found that the Dirac dispersion is generally induced in the (SrBi)+ layer containing a double-sized Bi square net. In contrast to the commonly observed isotropic Dirac cone, the Dirac cone in SrMnBi2 is highly anisotropic with a large momentum-dependent disparity of Fermi velocities of $\sim${}8. These findings demonstrate that a Bi square net, a common building block of various layered pnictides, provides a new platform that hosts highly anisotropic Dirac fermions.