Nitrogen-doped graphene quantum dots (NGQDs) have gained significant attention due to their various physical and chemical properties; however, there is a gap in the study of NGQDs’ magnetic properties. This work adds to the efforts of bridging the gap by demonstrating the room temperature paramagnetism in GQDs doped with Nitrogen up to 3.26 at.%. The focus of this experimental work was to confirm the paramagnetic behavior of metal free NGQDs resulting from the pyridinic N configuration in the GQDs host. Metal-free nitrogen-doped NGQDs were synthesized using glucose and liquid ammonia as precursors by microwave-assisted synthesis. This was followed by dialysis filtration. The morphology, optical, and magnetic properties of the synthesized NGQDs were characterized carefully through atomic force microscopy (AFM), transmission electron microscopy (TEM)), UV-VIS spectroscopy, fluorescence, X-ray photon spectroscopy (XPS), and vibrating sample magnetometer (VSM). The high-resolution TEM analysis of NGQDs showed that the NGQDs have a hexagonal crystalline structure with a lattice fringe of ~0.24 nm of (1120) graphene plane. The N1s peak using XPS was assigned to pyridinic, pyrrolic, graphitic, and oxygenated NGQDs. The magnetic study showed the room-temperature paramagnetic behavior of NGQDs with pyridinic N configuration, which was found to have a magnetization of 20.8 emu/g.

Various types of 2D/2D prototype devices based on graphene (G) and boron nitride nanosheets (BNNS) were fabricated to study the charge tunneling phenomenon pertinent to vertical transistors for digital and high frequency electronics. Specifically, G/BNNS/metal, G/SiO₂, and G/BNNS/SiO₂ heterostructures were investigated under direct current (DC-bias) conditions at room temperature. Bilayer graphene and BNNS were grown separately and transferred subsequently onto the substrates to fabricate 2D device architectures. High-resolution transmission electron microscopy confirmed the bilayer graphene structure and few layer BNNS sheets having a hexagonal B₃-N₃ lattice. The current vs voltage I(V) data for the G/BNNS/Metal devices show Schottky barrier characteristics with very low forward voltage drop, Fowler-Nordheim behavior, and 10⁻⁴ Ω/sq. sheet resistance. This result is ascribed to the combination of fast electron transport within graphene grains and out-of-plane tunneling in BNNS that circumvents grain boundary resistance. A theoretical model based on electron tunneling is used to qualitatively describe the behavior of the 2D G/BNNS/metal devices.