Could a laser field lead to the much sought-after tunable band gaps in graphene? By using Floquet theory combined with Green's functions techniques, we predict that a laser field in the mid-infrared range can produce observable band gaps in the electronic structure of graphene. Furthermore, we show how they can be tuned by using the laser polarization. Our results could serve as a guidance to design optoelectronic nanodevices.
Recent experiments showed that the surface of a three-dimensional topological insulator develops gaps in the Floquet-Bloch band spectrum when illuminated with a circularly polarized laser. These Floquet-Bloch bands are characterized by nontrivial Chern numbers which only depend on the helicity of the polarization of the radiation field. Here we propose a setup consisting of a pair of counterrotating lasers, and show that one-dimensional chiral states emerge at the interface between the two lasers. These interface states turn out to be spin polarized and may trigger interesting applications in the field of optoelectronics and spintronics.
We present a theoretical study of quantum charge pumping with a single ac gate applied to graphene nanoribbons and carbon nanotubes operating with low resistance contacts. By combining Floquet theory with Green’s function formalism, we show that the pumped current can be tuned and enhanced by up to two orders of magnitude by an appropriate choice of device length, gate voltage intensity, and driving frequency and amplitude. These results offer a promising alternative for enhancing the pumped currents in these carbon-based devices.
We study the interplay between lateral confinement and photon-induced processes on the electronic properties of illuminated graphene nanoribbons. We find that by tuning the device setup (edges geometries, ribbon width, and polarization direction), a laser with frequency Ω may either not affect the electronic structure, or induce bandgaps or depletions at ±ℏΩ/2, and/or at other energies not commensurate with half the photon energy. Similar features are also observed in the dc conductance, suggesting the use of the polarization direction to switch on and off the graphene device. Our results could guide the design of novel types of optoelectronic nano-devices.
We investigate charge and spin transport through an adiabatically driven, strongly interacting quantum dot weakly coupled to two metallic contacts with finite bias voltage. Within a kinetic equation approach, we identify coefficients of response to the time-dependent external driving and relate these to the concepts of charge and spin emissivities previously discussed within the time-dependent scattering matrix approach. Expressed in terms of auxiliary vector fields, the response coefficients allow for a straightforward analysis of recently predicted interaction-induced pumping under periodic modulation of the gate and bias voltage [Reckermann et al., Phys. Rev. Lett. 104, 226803 (2010)]. We perform a detailed study of this effect and the related adiabatic Coulomb blockade spectroscopy, and, in particular, extend it to spin pumping. Analytic formulas for the pumped charge and spin in the regimes of small and large driving amplitude are provided for arbitrary bias. In the absence of a magnetic field, we obtain a striking, simple relation between the pumped charge at zero bias and at bias equal to the Coulomb charging energy. At finite magnetic field, there is a possibility to have interaction-induced pure spin pumping at this finite bias value, and generally, additional features appear in the pumped charge. For large-amplitude adiabatic driving, the magnitude of both the pumped charge and spin at the various resonances saturates at values which are independent of the specific shape of the pumping cycle. Each of these values provides an independent, quantitative measure of the junction asymmetry.