Exploring the physics and potential applications of vectorially structured light with propagation-invariant transverse structures has benefited many areas of modern optics and photonics. In this paper, we investigate the noneigenvector modes of paraxial light fields, focusing on the propagation variations and revivals of their transverse structures, including both spatial and polarization structures. We show that the physical mechanism behind the variations and revivals of their transverse structure is linked to the evolution of the intramodal phases between the constituting spatial modes. Such evolution originates from fractional Gouy phases, or rather, geometric-phase difference between spatial modes with different orders under a same unitary transformation. This underlying principle provides a general guideline for shaping vectorially structured light with custom propagation-evolution properties, and may also inspire a wide variety of new applications based on structured light.

Nanocomposite dielectrics show a great potential application in high voltage direct current cables for their obvious improvements in electrical properties. In the present manuscript, nanocomposite composed of low-density polyethylene and nanoscale polystyrene particles is studied by using low-density polyethylene grafted with polystyrene molecule. Fourier-transform infrared spectra reveal successful grafting of the polystyrene molecule onto the low-density polyethylene chain and the scanning electron microscope image shows the homogeneously dispersed nanoscale polystyrene particles. The presence of the polystyrene nanoparticles obviously improves the dielectric properties, such as the direct current breakdown strength and space charge inhibition. The conductivity and thermally stimulated current characteristics imply the deep traps in the composite increase obviously. Density functional theory calculation reveals that the grafted polystyrene can accommodate both shallow and deep electron carriers, and the depth of the hole traps are as deep as 2.07 eV.

The hydrogen adsorption characteristics and mechanism of transition metal-doped zeolite template carbon (ZTC) as a novel porous material are studied by theoretical calculations employing first-principle all-electron atomic orbital method based on density functional theory. The stability of transition metal atoms (Sc, Ti, and V) decorated on zeolite template carbon is investigated by calculating the absorption binding energy. The adsorption configurations of the doped metal atom and adsorbed hydrogen are obtained from the energy functional minimization of first-principles calculations. The underlying mechanism for improving hydrogen storage performance of ZTC by doping transition metal atoms are explored through analyzing charge/spin populations of metal atoms in combination with the calculated results of hydrogen adsorption quantity and binding energy. To improve the hydrogen storage capability, the Sc, Ti, and V are individually introduced into the ZTC model according to the triplex axisymmetry. The hydrogen storage properties of ZTC decorated with different metal atoms are characterized by the adsorption energy and structure of several hydrogen atoms. The more energetically stable complex system with higher binding energy and adsorbing distance of hydrogen than lithium-doped ZTC can be achieved by doping Sc, Ti, V atoms in ZTC, which is expected to fulfill the substantial safe hydrogen storage by increasing hydrogen capacity with multi-sites doping of transition metal atoms. The present investigation provides a theoretical basis and predictions for the following experimental research and design of porous materials for hydrogen storage.

The electric field distributions in high voltage direct current cable termination are investigated with silicone rubber nanocomposite being the electric stress control insulator. The nanocomposite is composed of silicone rubber, nanoscale carbon black and graphitic carbon. The experimental results show that the physical parameters of the nanocomposite, such as thermal activation energy and nonlinearity-relevant coefficient, can be manipulated by varying the proportion of the nanoscale fillers. The numerical simulation shows that safe electric field distribution calls for certain parametric region of the thermal activation energy and nonlinearity-relevant coefficient. Outside the safe parametric region, local maximum of electric field strength around the stress cone appears in the termination insulator, enhancing the breakdown of the cable termination. In the presence of the temperature gradient, thermal activation energy and nonlinearity-relevant coefficient work as complementary factors to produce a reasonable electric field distribution. The field maximum in the termination insulator show complicate variation in the transient processes. The stationary field distribution favors the increase of the nonlinearity-relevant coefficient; for the transient field distribution in the process of negative lighting impulse, however, an optimized value of the nonlinearity-relevant coefficient is necessary to equalize the electric field in the termination.

Spin defects in semiconductors have demonstrated promising electronic structures for potential applications in quantum computing and sensing. Among various proposed quantum byte systems, spin defects in silicon carbide have attracted significant attention due to several advantages they offer over other options. In this study, we investigate carbon-antisite-vacancy defects in 4H silicon carbide through ab initio density functional theory calculations. With the HSE06 functionals, the ab initio computation can predict much more accurate electronic structures. However, the corresponding computational cost is high, especially for supercells consisting of several hundreds of atoms. In this investigation, the carbon-antisite-vacancy defect is studied by using a high-performance computing cluster, with a specific focus on supercells that encompass two such defects. The extension of a single carbon-antisite-vacancy defect is depicted by referring to the spin density distribution. Different defect types show similar spin density patterns. Based on the single defect characteristics, supercells with paired carbon-antisite-vacancy defects are created. It is found that the binding energy can reach 2 eV for overlapping defects. In the case of insignificant overlap of the corresponding single defects, the ground state magnetic moment is 4 µB, accompanied by a negligible binding energy. However, if there is a significant overlap of the spin density, the magnetic moment changes to 2 µB. These findings can serve as helpful references for the study of spin defects in 4H silicon carbide, particularly in the potential carbon-antisite-vacancy application research.