The reliability of semiconductor materials with electrical and optical properties are connected to their structures. The elastic strain field and tilt analysis of the crystal lattice, detectable by the variation in position and shape of the diffraction peaks, is used to quantify defects and investigate their mobility. The exploitation of high‐resolution X‐ray diffraction‐based methods for the evaluation of structural defects in semiconductor materials and devices is reviewed. An efficient and non‐destructive characterization is possible for structural parameters such as, lattice strain and tilt, layer composition and thickness, lattice mismatch, and dislocation density. The description of specific experimental diffraction geometries and scanning methods is provided. Today's X‐ray diffraction based methods are evaluated and compared, also with respect to their applicability limits. The goal is to understand the close relationship between lattice strain and structural defects. For different material systems, the appropriate analytical methods are highlighted.

Transparent conductive electrodes (TCEs) with a high figure of merit (FOM_e, defined as the ratio of transmittance to sheet resistance) are crucial for transparent electronic devices, such as touch screens, micro-supercapacitors, and transparent antennas. Two-dimensional (2D) titanium carbide (Ti₃C₂T_x), known as MXene, possesses metallic conductivity and a hydrophilic surface, suggesting dispersion stability of MXenes in aqueous media allowing the fabrication of MXene-based TCEs by solution processing. However, achieving high FOM_e MXene TCEs has been hindered mainly due to the low intrinsic conductivity caused by percolation problems. Here, we have managed to resolve these problems by (1) using large-sized Ti₃C₂T_x flakes (∼12.2 μm) to reduce interflake resistance and (2) constructing compact microstructures by blade coating. Consequently, excellent optoelectronic properties have been achieved in the blade-coated Ti₃C₂T_x films, i.e., a DC conductivity of 19 325 S cm^-1 at transmittances of 83.4% (≈6.7 nm) was obtained. We also demonstrate the applications of Ti₃C₂T_x TCEs in transparent Joule heaters and the field of supercapacitors, showing an outstanding Joule heating effect and high rate response, respectively, suggesting enormous potential applications in flexible, transparent electronic devices.