Optical beam-forming networks (OBFNs) based on optical true-time delay lines (OTTDLs) are well known as the promising candidate for solving the bandwidth limitation of traditional electronic phased array antennas (PAAs) due to beam squinting. Here we report, to the best of our knowledge, the first monolithic 1 × 8 microwave photonic beamformer, based on switchable OTTDLs on the silicon-on-insulator platform. The chip consists of a modulator, an eight-channel OBFN, and eight photodetectors, thus including hundreds of active and passive components in total. It has a wide operating bandwidth from 8 to 18 GHz, which is almost two orders larger than that of electronic PAAs. The beam can be steered to 31 distinguishable angles in the range from − 75.51 ∘ to 75.64°, based on the beam pattern calculation with the measured radiofrequency response. The response time for beam steering is 56 µs. These results represent a significant step toward the realization of integrated microwave photonic beamformers that can satisfy compact-size and low-power consumption requirements for the future radar and wireless communication systems.

We report a LiDAR transmitter incorporating both a hybrid-integrated tunable external cavity laser and a high-resolution 2-D optical phased array beam-steerer. Widely tunable single-mode lasing over a span of approximately 100 nm is achieved with >42 dB side-mode-suppression-ratio, 18 mW output power, and 2.8 kHz linewidth. Two-dimensional beam steering in a field-of-view of 140° × 16° exhibits a beam divergence of 0.051° × 0.016° measured in full width at half maximum. Leveraging the low propagation loss, negligible nonlinear loss, and low thermal sensitivity of silicon nitride, and combining the high mode confinement and efficient thermal tuning of silicon, the device affirms the feasibility of high-power on-chip lasing, power bottleneck elimination, and low on-chip insertion loss. It represents the first demonstration of a fully integrated LiDAR transmitter on the multi-layer silicon-nitride-on-silicon photonic platform, revealing the potential of complementary integration in the effort toward a LiDAR transmitter of sufficient optical power budget.

Chip-scale lasers with a wide tunable range and a narrow linewidth have rich applications in optical communications, sensing, and light detection and ranging systems. External cavity lasers (ECLs) have the advantage of a wide tuning range and a narrow linewidth compared with their counterparts such as distributed feedback lasers and distributed Bragg reflector lasers because the passive filter separated from the gain section can be widely tuned and the low-loss external cavity extends the photon lifetime. However, so far, the tuning range achieved by the chip-scale ECLs is in the range of 80–120 nm, smaller than that of the bulk free-space ECL (typically >160 nm). The bottleneck in reaching an ultrabroad tuning range for chip-scale ECLs lies in the unsuppressed side modes of the external cavity. Here, we demonstrate a hybrid-integrated ECL consisting of a broadband III–V reflective semiconductor optical amplifier and a low-loss Si₃N₄ wavelength-selective reflector. A record 172-nm lasing wavelength tuning range together with a more than 40 dB side-mode suppression ratio is achieved beyond the free spectral range of the Vernier ring filter due to the enhanced lasing mode selection from a tunable Sagnac loop reflector. The Si₃N₄ platform enables a low-loss external cavity, facilitating laser linewidth reduction below 4 kHz over the full tuning range. The on-chip output power reaches 26.7 mW at a wavelength of 1550 nm.

Integrated quantum key distribution (QKD) systems based on photonic chips have high scalability and stability, and are promising for further construction of global quantum communications networks. On-chip quantum light sources are a critical component of a fully integrated QKD system; especially a continuous-variable QKD (CV-QKD) system based on coherent detection, which has extremely high requirements for the light sources. Here, for what we believe is the first time, we designed and fabricated two on-chip tunable lasers for CV-QKD, and demonstrated a high-performance system based on these sources. Because of the high output power, fine tunability, and narrow linewidth, the involved on-chip lasers guarantee the accurate shot-noise-limited detection of quantum signals, center wavelength alignment of nonhomologous lasers, and suppression of untrusted excess noise. The system’s secret key rate can reach 0.75 Mb/s at a 50 km fiber distance, and the secure transmission distance can exceed 100 km. Our results mark a breakthrough toward building a fully integrated CV-QKD, and pave the way for a reliable and efficient terrestrial quantum-secure metropolitan area network.

We investigate the feasibility of generating a plateau envelope for beam-steering with optical phased arrays (OPAs). The design guidelines are summarized from numerical simulations and verified with a fabricated chip, which incorporates both a coupling-suppressed curved waveguide array with a pitch of 0.8 μm for light emission and a 1-μm-long silica cavity for envelope tailoring. This silicon-on-insulator (SOI) based device demonstrates aliasing-free beam-steering over the entire field-of-view available (−32°~32°) with a far-field addressability of 6.71°. The steered beam exhibits a plateau envelope, with a peak intensity fluctuation of less than 0.45 dB, from −30° to 30°. These results represent a significant step towards realizing integrated OPA for optical beam-forming with a large aliasing-free steering range and a uniform beam intensity.