Dr. Jaewon Jang

Solution-p-type thin-film transistors, consisting of sol-gel-processed CuO films, were fabricated. The optoelectric properties of sol-gel-processed, CuO-based back gate thin-film transistors were investigated, and a detectivity of 1.38 ×10 11 (cm Hz1/2 W -1) was achieved. This detectivity for sol-gel-processed CuO thin-film transistors is higher than that of the previously reported layered two-dimensional material systems and comparable to that of devices based on a one-dimensional nanowire system. Our results indicate that the sol-gel–processed, CuO-based photodetector system is a promising candidate for applications such as near-infrared (NIR) imaging devices, sensors, solar cells, and p-type inks for future printed electronics.

28 March 2018 in IEEE Electron Device Letters

Journal Article

Impact of Device Area and Film Thickness on Performance of Sol-Gel Processed ZrO₂RRAM

Sojeong Lee

Taegyun Kim

Bongho Jang

Won-Yong Lee

Kyu Chan Song

Jaewon Jang

A sol-gel-processed ZrO₂ layer was used as an active layer for a resistive random-access memory (RRAM). With top Ag electrodes, the fabricated devices show conventional bipolar switching memory properties. The impacts of device size and ZrO₂ film thickness on device performance were investigated. The scaling of the device area and the successful increase in ZrO₂ film thickness increased the high-resistance state (HRS)/low-resistance state (LRS) ratio values and improved the non-volatile memory properties, such as retention and endurance. The fabricated ITO/ZrO₂/Ag RRAM shows good retention and endurance properties. The HRS and LRS were found to last for 10⁴ s without any significant degradation.

About Me

Jae Won Jang received B.S. and M.S degrees in electrical engineering from Korea University, Seoul, Korea, in 2006 and 2008, respectively. In 2013, Jaewon Jang received Ph.D. degrees in electrical engineering and computer sciences from the University of California at Berkeley, CA, USA. From 2013 to 2014, he was a postdoctoral researcher, working on the development of high-performance metal oxide transistors by printing technology. From 2015 to 2016, he was a researcher and working on the development of high-performance organic thin-film transistors in Samsung Advanced Institute and Technology, Suwon, Korea. Since 2016, he has been with Kyungpook National University, Daegu, Korea, where he is currently an assistant professor with the School of Electronics Engineering.

Dr. Jaewon Jang

Dr. Jaewon Jang

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