In this study, we have carried out a theoretical investigation of CdSe/ZnSe core/shell spherical quantum dot (CSQD) embedded in different dielectric matrix. The effect of surrounding matrix and the external electric field on the linear and third-order nonlinear real and imaginary parts of the dielectric function have been simulated numerically using the effective mass approximation and taking into account the compact density matrix approach. The electronic band structure and corresponding wave functions were calculated by solving the Schrödinger equation in the framework evoked previously. The study revealed a significant blue shift of the transition energies under electric field offering the possibility of adjusting them. In addition, by varying the dielectric matrices enveloping our main structure, it was also found that the choice of the pattern of the matrix is fundamental for the manipulation of the resonance peak energies of the dielectric function.

The impact of delta-doping modulation and electric field influence within a nanostructure consisting of three GaAs quantum wells (QWs) separated by AlGaAs barriers was investigated. The quantized energy levels, Fermi energy, wavefunctions, self-consistent potential, and electron density distribution were evaluated by a self-consistent solution of the Schrödinger and Poisson equations using the finite element method within the FEniCS project in Python. The results indicate that increasing the electric field reduces energy levels and Fermi energy. In addition, the delta-doping position and electric field significantly affect the self-consistent potential and electron density distribution. This study provides a possibility to tailor optical properties, such as the linear absorption coefficient and photoluminescence, by adjusting geometrical and non-geometrical parameters, including donor density, enhancing the functionality of doped QWs in designing high electron mobility transistors.