Mechanisms of charge transport in molecular junctions involving hydrogen bonds are complex and remain mostly unclear. This study is focused on the elucidation of the electron transfer in a molecular device consisting of two boron-doped diamond interfaces bound with an aromatic linker and a hydrogen bonding surrogating molecule. The projected local density of states (PLODS) analysis coupled with transmission spectra and current-voltage (I-V) simulations show that hydrogen bonding through electron-donating hydroxyl groups in the aromatic linker facilitates electron transfer, while the electron-withdrawing carboxyl group inhibits electron transfer across the junction. Moreover, slight variations in the geometry of hydrogen bonding lead to significant changes in the alignment of the energy levels and positions of the transmission modes. As a result, we observe the switching of the electron transport mechanism from tunneling to hopping accompanied by a change in the shape of the I-V curves and current magnitudes. These results give important information on the tailoring of the electronic properties of molecular junctions.

In this work, we reveal in detail the effects of high-temperature treatment in air at 600 °C on the microstructure as well as the physico-chemical and electrochemical properties of boron-doped diamond (BDD) electrodes. The thermal treatment of freshly grown BDD electrodes was applied, resulting in permanent structural modifications of surface depending on the exposure time. High temperature affects material corrosion, inducing crystal defects. The oxidized BDD surfaces were studied by means of cyclic voltammetry (CV) and scanning electrochemical microscopy (SECM), revealing a significant decrease in the electrode activity and local heterogeneity of areas owing to various standard rate constants. This effect was correlated with a resultant increase of surface resistance heterogeneity by scanning spreading resistance microscopy (SSRM). The X-ray photoelectron spectroscopy (XPS) confirmed the rate and heterogeneity of the oxidation process, revealing hydroxyl species to be dominant on the electrode surface. Morphological tests using scanning electron microscopy (SEM) and atomic force microscopy (AFM) revealed that prolonged durations of high-temperature treatment lead not only to surface oxidation but also to irreversible structural defects in the form of etch pits. Our results show that even subsequent electrode rehydrogenation in plasma is not sufficient to reverse this surface oxidation in terms of electrochemical and physico-chemical properties, and the nature of high-temperature corrosion of BDD electrodes should be considered irreversible.

The novel procedure of few-layer black phosphorus (FLBP) stabilization and functionalisation was here proposed. The cationic polymer PLL and non-ionic PEG have been involved into encapsulation of FLBP to allow sufficient time for further nanofabrication process and overcome environmental degradation. Two different spacer chemistry was designed to bind polymers to tumor-homing peptides. The efficiency of functionalisation was examined by RP-HPLC, microscopic (TEM and SEM) and spectroscopic (FT-IR and Raman) techniques as well supported by ab-initio modelling. The cell and dose dependent cytotoxicity of FLBP and its bioconjugates was evaluated against HB2, MCF-7 and MDA-MB-231 cell lines. Functionalisation allowed not only for improvement of environmental stability, but also enhances therapeutic effect by abolished the cytotoxicity of FLBP against HB2 cell line. Moreover, modification of FLBP with PLL caused increase of selectivity against highly aggressive breast cancer cell lines. Results indicate the future prospect application of black phosphorus nanosheets as nanocarrier, considering its unique features synergistically with conjugated polymeric micelles.

The main subject of this study are molecular structures and optical properties of boron-doped diamond films with [B]/[C]_ppm ratio between 1000 and 10 000, fabricated in two molar ratios of CH₄-H₂mixture (1 % and 4 %). Boron-doped diamond (BDD) film on the fused silica was presented as a conductive coating for optical and electronic purposes. The scanning electron microscopy images showed homogenous and polycrystalline surface morphology. The Raman spectroscopy confirmed the growth of sp³ diamond phase and sp²carbon phase, both regular and amorphous, on the grain boundaries, as well as the efficiency of boron doping. The sp³/sp²ratio was calculated using the Raman spectra deconvolution method. A high refractive index (in a range of 2.0 to 2.4 at λ= 550 nm) was achieved for BDD films deposited at 700 °C. The values of extinction coefficient were below 1.4 at λ= 550 nm, indicating low absorption of the film